CAJ | 학술논문

利用卢瑟夫背散射/沟道技术和金属有机化学气相沉积方法,对蓝宝石衬底上在不同温度、压强下生长的Ga2+xO3?x薄膜进行结构和结晶品质的测量与分析;并结合高分辨X射线衍射分析技术,通过对其对称(ˉ402)面的θ—2θ及ω扫描,确定了其结构类型及结晶品质.实验表明:在相同的生长温度(500?C)下,结晶品质随压强的下降而变好,生长压强为15 Torr (1 Torr=133.322 Pa)的样品其结晶品质最好,沿轴入射之比χmin值为14.5%;在相同的生长压强(15 Torr)下,结晶品质受生长温度的影响不大,所以,生长温度不是改变结晶品质的主要因素;此外,在相同的生长条件下制备的样品,分别经过700,800和900?C退火后,其结晶品质随退火温度的变化而变化.退火温度为800?C的样品的结晶品质最好,χmin值为11.1%;当退火温度达到900?C时,样品部分分解;经热处理的样品其X射线衍射谱中有一个强的Ga2O3(ˉ402)面衍射峰,其半峰全宽为0.5?,表明该Ga2O3外延膜是(ˉ402)择优取向.
이용로슬부배산사/구도기술화금속유궤화학기상침적방법,대람보석츤저상재불동온도、압강하생장적Ga2+xO3?x박막진행결구화결정품질적측량여분석;병결합고분변X사선연사분석기술,통과대기대칭(ˉ402)면적θ—2θ급ω소묘,학정료기결구류형급결정품질.실험표명:재상동적생장온도(500?C)하,결정품질수압강적하강이변호,생장압강위15 Torr (1 Torr=133.322 Pa)적양품기결정품질최호,연축입사지비χmin치위14.5%;재상동적생장압강(15 Torr)하,결정품질수생장온도적영향불대,소이,생장온도불시개변결정품질적주요인소;차외,재상동적생장조건하제비적양품,분별경과700,800화900?C퇴화후,기결정품질수퇴화온도적변화이변화.퇴화온도위800?C적양품적결정품질최호,χmin치위11.1%;당퇴화온도체도900?C시,양품부분분해;경열처리적양품기X사선연사보중유일개강적Ga2O3(ˉ402)면연사봉,기반봉전관위0.5?,표명해Ga2O3외연막시(ˉ402)택우취향.
Ga2+xO3?x thin films grown on sapphire substrates by metal-organic chemical vapor deposition under different conditions (tem-perature pressure) are studied by rutherford backscattering spectrometry/channeling. The structural information and crystalline quality are further investigated by high resolution X-ray diffraction (HR-XRD). The results suggest that at the same growth-temperature the crystalline quality is improved with pressure decreasing, while χmin reaches a minimum 14.5% when the pressure decreases to 15 Torr (1 Torr=133.322 Pa). Then if the pressure is kept at 15 Torr, all films present similar crystalline qualities, which hints that the temperature is not a chief factor. Moreover, films prepared under the same condition are annealed at different temperatures: 700, 800 and 900 ?C. At first the crystalline quality is improved by increasing the annealing temperature and reaches a best χmin of 11.1%. Nevertheless, as the annealing temperature is further increased, the samples become decomposed. XRD spectra of annealed samples each reveal a strong peak of Ga2O3 (ˉ402), indicating that the epitaxial layer has a preferred orientation (ˉ402).