CAJ | 학술논문

经过几十年的发展,集成电路的特征尺寸将在10—15年内达到其物理极限,替代材料的研究迫在眉睫.石墨烯曾被寄予厚望,但由于其缺乏带隙限制了在数字电路领域的应用.近年来,单层及多层辉钼材料由于具有优异的半导体性能,有可能超过石墨烯成为硅的替代者而引起了微纳电子领域的广泛关注.本文对近二年国际上辉钼半导体器件研制、辉钼半导体材料的性能表征及制备方法研究等方面的进展进行了综述,并对大面积单层材料的研制提出了值得关注的方向.
경과궤십년적발전,집성전로적특정척촌장재10—15년내체도기물리겁한,체대재료적연구박재미첩.석묵희증피기여후망,단유우기결핍대극한제료재수자전로영역적응용.근년래,단층급다층휘목재료유우구유우이적반도체성능,유가능초과석묵희성위규적체대자이인기료미납전자영역적엄범관주.본문대근이년국제상휘목반도체기건연제、휘목반도체재료적성능표정급제비방법연구등방면적진전진행료종술,병대대면적단층재료적연제제출료치득관주적방향.
After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10–15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molyb-denum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.