CAJ | 학술논문

GaN薄膜中的马赛克结构随厚度发生的变化
GaN박막중적마새극결구수후도발생적변화
Mosaic structure in epitaxial GaN film varying with thickness?

万方数据

物理学报物理學報 물이학보

2013年 5期 279-283 ,共5页

张韵%谢自力%王健%陶涛%张荣%刘斌%陈鹏%韩平%施毅%郑有炓

장운%사자력%왕건%도도%장영%류빈%진붕%한평%시의%정유료

GaN薄膜马赛克结构%厚度%HRXRD GaN薄膜馬賽剋結構%厚度%HRXRD
GaN박막마새극결구%후도%HRXRD
GaN thin film%mosaic structure%thickness%HRXRD

利用高分辨率X射线衍射(HRXRD)对MOCVD系统中生长在c面Al2O3上的不同厚度的GaN薄膜内马赛克结构进行了研究.在对称面的三轴X射线衍射曲线中,用两种方法计算得到晶粒的垂直关联长度和水平关联长度,两者均随着薄膜厚度的增加而增加,并且垂直关联长度近似膜厚从倒易空间图中得出的横向关联长度也有相同的趋势,结合非对称面的衍射曲线用Williamson-Hall方法和外推法分别拟合出晶粒的面外倾斜角和面内扭转角,他们随着薄膜厚度的增加显著减少,这一切都表明厚度的增加,晶粒的单向有序排列越来越整齐,外延片的质量越来越高.
이용고분변솔X사선연사(HRXRD)대MOCVD계통중생장재c면Al2O3상적불동후도적GaN박막내마새극결구진행료연구.재대칭면적삼축X사선연사곡선중,용량충방법계산득도정립적수직관련장도화수평관련장도,량자균수착박막후도적증가이증가,병차수직관련장도근사막후종도역공간도중득출적횡향관련장도야유상동적추세,결합비대칭면적연사곡선용Williamson-Hall방법화외추법분별의합출정립적면외경사각화면내뉴전각,타문수착박막후도적증가현저감소,저일절도표명후도적증가,정립적단향유서배렬월래월정제,외연편적질량월래월고.
In this article. We report on the study of mosaic structures of different thick GaN films grown on sapphire (0001) by metalorganic chemical vapor deposition (MOCVD), using high resolution x-ray diffraction. The result from the symmetrical reflections show that the mosaic vertical and lateral correlation lengths that are calculated by two methods increase with film thickness increasing, and the vertical correlation lengths are close to the film thickness, and the same trend in the lateral correlation lengths derived from the reciprocal space maps. By the help of asymmetrical reflections and Williamson-Hall extrapolation method, the tilt and twist mosaic drop with thickness increasing at different rates. All this shows that the increase in thickness lads to the more uniform and neat grain arrangement and the higher-quality epitaxial wafers.