CAJ | 학술논문

积累区MOS电容线性度高且不受频率限制,具有反型区MOS电容不可比拟的优势.本文在研究应变Si NMOS电容C-V 特性中台阶效应形成机理的基础上,通过求解电荷分布,建立了应变Si/SiGe NMOS积累区电容模型,并与实验结果进行了对比,验证了模型的正确性.最后,基于该模型,研究了锗组分、应变层厚度、掺杂浓度等参数对台阶效应的影响,为应变Si器件的制造提供了重要的指导作用.本模型已成功用于硅基应变器件模型参数提取软件中,为器件仿真奠定了理论基础.
적루구MOS전용선성도고차불수빈솔한제,구유반형구MOS전용불가비의적우세.본문재연구응변Si NMOS전용C-V 특성중태계효응형성궤리적기출상,통과구해전하분포,건립료응변Si/SiGe NMOS적루구전용모형,병여실험결과진행료대비,험증료모형적정학성.최후,기우해모형,연구료타조분、응변층후도、참잡농도등삼수대태계효응적영향,위응변Si기건적제조제공료중요적지도작용.본모형이성공용우규기응변기건모형삼수제취연건중,위기건방진전정료이론기출.
Accumulation MOS capacitor is more linear than inversion MOS capacitor and is almost independent of the operation frequency. In this paper, we present first the formation mechanism of the“plateau”, observed in the C-V characteristic of the strained-Si NMOS capacitor, and then a physical model for strained-Si NMOS capacitor in accumulation region. The results from the model show to be in excellent agreement with the experimental data. The proposed model can provide valuable reference for the strained-Si device design, and is has been implemented in the software for extracting the parameter of strained-Si MOSFET.