CAJ | 학술논문

基于半导体物理和IGBT基本结构,深入论述了IGBT关断机理,推导出IGBT关断时间随电压和电流的变化规律:关断时间随电压的增大而增大,随电流的增大而减小.查明了变化规律的物理机理,仿真和实验结果验证了理论推导与所得变化规律的正确性.提出采用指数与双曲线复合规律描述IGBT关断时间的变化.对深化IGBT关断机理和解决电力电子装置死区时间设置等工程问题具有一定的理论意义和应用价值.
기우반도체물리화IGBT기본결구,심입논술료IGBT관단궤리,추도출IGBT관단시간수전압화전류적변화규률:관단시간수전압적증대이증대,수전류적증대이감소.사명료변화규률적물리궤리,방진화실험결과험증료이론추도여소득변화규률적정학성.제출채용지수여쌍곡선복합규률묘술IGBT관단시간적변화.대심화IGBT관단궤리화해결전력전자장치사구시간설치등공정문제구유일정적이론의의화응용개치.
Based on semiconductor physics and the essential structure of IGBT, the turn-off mechanism of IGBT is deeply discussed regard-ing the problem of turn-off time changing with voltage and current. The laws of turn-off time changing with voltage and current are deduced, i.e., the turn-off time increases with voltage increasing and decreases with current increasing. The physical mechanisms of the laws are found out. The simulation results and experimental results, demonstrate that the derived and the existing law are constant, thereby proving the correctness of the derived law. It is put forward that the law of IGBT turn-off time changing with current and voltage accords with the complex law of exponent and hyperbola. For further studying the IGBT turn-off mechanism and solving the engineering puzzles including the power electronic dead time setting, the present study is significant in theory and practical application.