CAJ | 학술논문

利用简单的化学气相沉积方法,首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜,并在此基础上制作了p-ZnO/n-Si异质结发光二极管.对制备的Sb掺杂ZnO薄膜在800?C下进行了热退火处理,发现退火后样品的晶体质量和表面形貌都得到明显提高,并且薄膜呈现的电导类型为p型,载流子浓度为9.56×1017 cm?3.此外,该器件还表现出良好的整流特性,正向开启电压为4.0 V,反向击穿电压为9.5 V.在正向45 mA的注入电流条件下,器件实现了室温下的电致发光.这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现,这为ZnO基光电器件的材料制备提供了一种简单可行的方法.
이용간단적화학기상침적방법,수선재n-Si츤저상생장Sb참잡p-ZnO박막,병재차기출상제작료p-ZnO/n-Si이질결발광이겁관.대제비적Sb참잡ZnO박막재800?C하진행료열퇴화처리,발현퇴화후양품적정체질량화표면형모도득도명현제고,병차박막정현적전도류형위p형,재류자농도위9.56×1017 cm?3.차외,해기건환표현출량호적정류특성,정향개계전압위4.0 V,반향격천전압위9.5 V.재정향45 mA적주입전류조건하,기건실현료실온하적전치발광.저설명교고질량적ZnO박막야가이통과간단적화학기상침적방법래실현,저위ZnO기광전기건적재료제비제공료일충간단가행적방법.
The Sb-doped ZnO film/n-Si heterojunction is synthesized by simple chemical vapor deposition method. The quality of crystal and surface morphology of Sb-doped ZnO film are improved after annealing at 800 ?C, which exhibits effective p-type conductivity with a hole concentration of 9.56×1017 cm?3. The properties of the p-ZnO/n-Si heterojunction photoelectric device are investigated. The resuets show that this device has good rectifier characteristics with a positive open electric of 4.0 V, and a reverse breakdown voltage of 9.5 V. The electroluminescent is realized at room temperature under the condition of forward current 45 mA. These results also confirm that the high-quality ZnO film can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to ZnO based opto-electronic device.