物理学报
物理學報
물이학보
2013年
5期
481-486
,共6页
量子点%生长方向%平衡形态%应变弛豫
量子點%生長方嚮%平衡形態%應變弛豫
양자점%생장방향%평형형태%응변이예
quantum dots%growth orientation%equilibrium morphology%strain relaxation
由于材料弹性的各向异性与表面能的各向异性,不同的生长方向或生长面,量子点有不同的力学性能与行为.本文基于各向异性弹性理论的有限元方法,以金字塔型自组织InAs/GaAs半导体量子点为研究对象,分别在7个常见的生长方向或生长面上,对其应变能和应变弛豫能、自由能等进行了分析计算,得到了这些能量随生长方向的变化规律.结果表明(211)量子点应变弛豫能最大,而(100)量子点应变弛豫能最小.这些结果可为可控制备量子点提供理论参考.
由于材料彈性的各嚮異性與錶麵能的各嚮異性,不同的生長方嚮或生長麵,量子點有不同的力學性能與行為.本文基于各嚮異性彈性理論的有限元方法,以金字塔型自組織InAs/GaAs半導體量子點為研究對象,分彆在7箇常見的生長方嚮或生長麵上,對其應變能和應變弛豫能、自由能等進行瞭分析計算,得到瞭這些能量隨生長方嚮的變化規律.結果錶明(211)量子點應變弛豫能最大,而(100)量子點應變弛豫能最小.這些結果可為可控製備量子點提供理論參攷.
유우재료탄성적각향이성여표면능적각향이성,불동적생장방향혹생장면,양자점유불동적역학성능여행위.본문기우각향이성탄성이론적유한원방법,이금자탑형자조직InAs/GaAs반도체양자점위연구대상,분별재7개상견적생장방향혹생장면상,대기응변능화응변이예능、자유능등진행료분석계산,득도료저사능량수생장방향적변화규률.결과표명(211)양자점응변이예능최대,이(100)양자점응변이예능최소.저사결과가위가공제비양자점제공이론삼고.
Different growth orientations influence the mechanical properties and behavior of quantum dots, due to the anisotropy of elasticity and surface energy of the material. In this paper, the relations of the strain energy, strain relaxation energy and free energy to growth orientation are analyzed for the self-assembled InAs/GaAs semiconductor quantum dots, based on finite element method of cubic elasticity theory. The results show that the strain relaxation of the (211) quantum dots is biggest, and that of the (100) quantum dots is smallest. These can provide the theoretical basis for the growth of quantum dots in a controlled fashion.
