CAJ | 학술논문

本文采用60 MeV Br离子、5 MeV质子和1 MeV电子等三种辐射源,针对CC4013型互补金属氧化物半导体器件(complementary metal oxide semiconductor, CMOS)进行辐射损伤研究.通过Geant4程序计算了该器件电离辐射吸收剂量与芯片厚度的关系,经过计算,在相同注量下,60 MeV Br离子的电离吸收剂量最大,1 MeV电子产生的电离吸收剂量最小.应用Keithley4200-SCS半导体特性分析仪在原位条件下研究了CC4013器件电性能参数随辐射吸收剂量的变化关系.测试结果表明,相同电离辐射吸收剂量下,1 MeV电子对CC4013器件的阈值电压参数影响最大,5 MeV质子其次,60 MeV Br离子的影响最弱.
본문채용60 MeV Br리자、5 MeV질자화1 MeV전자등삼충복사원,침대CC4013형호보금속양화물반도체기건(complementary metal oxide semiconductor, CMOS)진행복사손상연구.통과Geant4정서계산료해기건전리복사흡수제량여심편후도적관계,경과계산,재상동주량하,60 MeV Br리자적전리흡수제량최대,1 MeV전자산생적전리흡수제량최소.응용Keithley4200-SCS반도체특성분석의재원위조건하연구료CC4013기건전성능삼수수복사흡수제량적변화관계.측시결과표명,상동전리복사흡수제량하,1 MeV전자대CC4013기건적역치전압삼수영향최대,5 MeV질자기차,60 MeV Br리자적영향최약.
During serving in orbit, spacecraft will be affected by the radiation environment of the space high-energy charged particles, leading to the performance degradation or even malfunctions of electronic components. The complementary metal oxide semiconductor (CMOS) devices are sensitive to ionization damage. Therefore, it is valuable to research the mechanism of radiation effects on CMOS devices, and is significant to engineering and theory. The CC4013 CMOS integrated circuits are irradiated with 60 MeV Br ions, 5 MeV protons and 1 MeV electrons. Based on the data calculated by Geant4 code, the ionizing absorbed dose induced by 60 MeV Br ions is greatest, and the ionizing absorbed dose induced by 1 MeV electrons is lowest. The degradation of CC4013 device during the irradiation test is in-situ measured with Keithley 4200-SCS semiconductor characteristic system. From the experimental results, the threshold voltage degradation in CC4013 under an exposure of 1 MeV electrons is greatest at the same dose, a little lower under 5 MeV protons, and lowest under 60 MeV Br ions.