CAJ | 학술논문

由于铟镓锌氧化物(IGZO)薄膜具有高迁移率和高透过率的特点,它作为有源层被广泛的应用于薄膜晶体管(TFT).本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极,用简单低成本的掩膜法控制沟道的尺寸,制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管(IGZO-TFT).利用X射线衍射仪(XRD)和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱,研究了IGZO薄膜的结构和光学特性.通过测试IGZO-TFT的输出特性和转移特性曲线,讨论了IGZO有源层厚度对IGZO-TFT特性的影响.制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V?1·s?1,开关比高于107.
유우인가자양화물(IGZO)박막구유고천이솔화고투과솔적특점,타작위유원층피엄범적응용우박막정체관(TFT).본문이용자공천사방법제비료TFT적유원층IGZO화원루전겁,용간단저성본적엄막법공제구도적척촌,제비료구유고천이솔、저책결구적n형비정인가자양화물박막정체관(IGZO-TFT).이용X사선연사의(XRD)화자외가견광분광광도계분별측시료IGZO박막적연사도보화투과솔도보,연구료IGZO박막적결구화광학특성.통과측시IGZO-TFT적수출특성화전이특성곡선,토론료IGZO유원층후도대IGZO-TFT특성적영향.제비적IGZO-TFT기건적장효응천이솔고체15.6 cm2·V?1·s?1,개관비고우107.
Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet–visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V?1·s?1, and the on/off ratio is higher than 107.