CAJ | 학술논문

为了找到并纠正抗辐射晶体管3DK9DRH 贮存失效的原因,利用外部检查、电性能测试、检漏、内部水汽检测、开封检查等试验完成了对晶体管3DK9DRH 的一种贮存失效分析.结果表明晶体管存在工艺问题,内部未进行水汽控制,加上内部硫元素过高,长期贮存后内部发生了氧化腐蚀反应,从而导致晶体管功能失效.对此建议厂家对晶体管的生产工艺进行检查,对水汽和污染物如硫元素等加以控制,及时剔除有缺陷的晶体管.
위료조도병규정항복사정체관3DK9DRH 저존실효적원인,이용외부검사、전성능측시、검루、내부수기검측、개봉검사등시험완성료대정체관3DK9DRH 적일충저존실효분석.결과표명정체관존재공예문제,내부미진행수기공제,가상내부류원소과고,장기저존후내부발생료양화부식반응,종이도치정체관공능실효.대차건의엄가대정체관적생산공예진행검사,대수기화오염물여류원소등가이공제,급시척제유결함적정체관.
To find the cause of storage failure to radiation?hardened transistor 3DK9DRH and prevent the incident,a storage failure analysis of transistor 3DK9DRH was im plem ented by visual inspection,electrical perform ance test,leak de ?tection,internal m oisture detection and breaking seal inspection. The results show that the failure reasons of long ?term stored transistor are incom plete productive technology,that is,the internal water vapor is not control ed and in?ternal sulfur elem ent is too high,which would lead to oxidation corrosion reaction and transistor function failure. A suggestion that the m anufacturers should exam the transistor productive technology,and control the water vapor and contam inants such as sulfur strictly is m ade in this paper. O f cause,the defective transistors should be picked out before being used.