CAJ | 학술논문

针对高Mg和Li质量比盐湖卤水提锂困难的问题,提出利用LiFePO4/FePO4材料对盐湖卤水进行选择性提锂的思路.在热力学计算的基础上绘制298.15 K时Me(Li, Na, K, Mg)-Fe-P-H2O体系的?—pH图,并讨论FePO4对盐湖中Na+、K+、Mg2+与Li+的选择性吸附问题.结果表明:当离子浓度为0.1 mol/L、体系氧化还原电位降到0.36 V(vs SCE)时,FePO4中+3价的铁即被还原为+2价,同时Li+嵌入FePO4晶格生成LiFePO4;而体系电位需降到0.132 V和0.073 V才分别生成KFePO4和NaFePO4,说明材料对Li的选择性优于Na和K的,而Mg0.5FePO4则在计算分析的范围内不能稳定存在,说明FePO4对Mg2+无吸附性.因而,在适当的电位范围内(本研究的计算条件下为0.173~0.33 V)即可利用磷酸铁材料实现Li与Na、K、Mg等元素的选择性提取,而吸附锂后通过调节氧化还原电位大于约0.33 V,即可实现LiFePO4材料中Li的脱出.
침대고Mg화Li질량비염호서수제리곤난적문제,제출이용LiFePO4/FePO4재료대염호서수진행선택성제리적사로.재열역학계산적기출상회제298.15 K시Me(Li, Na, K, Mg)-Fe-P-H2O체계적?—pH도,병토론FePO4대염호중Na+、K+、Mg2+여Li+적선택성흡부문제.결과표명:당리자농도위0.1 mol/L、체계양화환원전위강도0.36 V(vs SCE)시,FePO4중+3개적철즉피환원위+2개,동시Li+감입FePO4정격생성LiFePO4;이체계전위수강도0.132 V화0.073 V재분별생성KFePO4화NaFePO4,설명재료대Li적선택성우우Na화K적,이Mg0.5FePO4칙재계산분석적범위내불능은정존재,설명FePO4대Mg2+무흡부성.인이,재괄당적전위범위내(본연구적계산조건하위0.173~0.33 V)즉가이용린산철재료실현Li여Na、K、Mg등원소적선택성제취,이흡부리후통과조절양화환원전위대우약0.33 V,즉가실현LiFePO4재료중Li적탈출.
@@@@LiFePO4/FePO4 material was chosen as ion-sieve for selectively extracting Li from high Mg/Li mass ratio brine. Thermodynamic analysis was conducted about selectivity of adsorption of Na+, K+, Mg2+and Li+ by FePO4 ion-sieve. The corresponding ?-pH diagrams of Me (Li, Na, K, Mg)-Fe-P-H2O system at 298.15K were plotted and analyzed. The results show that, under the condition of ion concentration 0.1 mol/L, the redox potential of Me (Li, Na, K, Mg)-Fe-P-H2O system is controlled not higher than 0.36V (vs SCE), Fe3+in FePO4 is reduced to Fe2+, and, Li+is inserted into FePO4 crystal lattice to form LiFePO4 synchronously. KFePO4 and NaFePO4 will not be obtained until the potential of the system is reduced to 0.132 V and 0.073 V, respectively. Li+is absorbed preferentially compared with Na+and K+by FePO4 ion-sieve. Mg0.5FePO4 can’t exist steadily in the studied range, which means that Mg2+can’t be absorbed by the material. Therefore, the FePO4 ion-sieve can be used to selectively extract Li+when the redox potential being set within 0.173~0.33 V. After extraction, Li can be de-intercalated from LiFePO4 by setting the potential of system above 0.33 V.