电讯技术
電訊技術
전신기술
TELECOMMUNICATIONS ENGINEERING
2013年
5期
623-627
,共5页
梁勤金**%董四华%郑强林%余川
樑勤金**%董四華%鄭彊林%餘川
량근금**%동사화%정강림%여천
固态功率放大器%C频段GaN功率放大器%高效率%宽禁带GaN器件
固態功率放大器%C頻段GaN功率放大器%高效率%寬禁帶GaN器件
고태공솔방대기%C빈단GaN공솔방대기%고효솔%관금대GaN기건
solidstate power amplifier%C-band GaN power amplifier%high efficiency%wide bandgap GaN device
研制了一种性能优良的全固态C频段高效率移相氮化镓( GaN)功率放大器模块.介绍了该功放模块设计方案及工作原理,并给出了该功放模块技术参数实验测试结果.该模块输出功率30 W,带宽10 MHz,带有6位移相功能,具有C频段高频率、固态、小型化、高效率、高功率密度、高击穿电压特性,是一种目前国内外尚无类似集成设计的最新高性能氮化镓( GaN)功率放大器模块.因其功放模块输出末级采用了美国Cree公司第三代宽禁带GaN功放管优化设计,实现了固态C频段高效率功率输出.
研製瞭一種性能優良的全固態C頻段高效率移相氮化鎵( GaN)功率放大器模塊.介紹瞭該功放模塊設計方案及工作原理,併給齣瞭該功放模塊技術參數實驗測試結果.該模塊輸齣功率30 W,帶寬10 MHz,帶有6位移相功能,具有C頻段高頻率、固態、小型化、高效率、高功率密度、高擊穿電壓特性,是一種目前國內外尚無類似集成設計的最新高性能氮化鎵( GaN)功率放大器模塊.因其功放模塊輸齣末級採用瞭美國Cree公司第三代寬禁帶GaN功放管優化設計,實現瞭固態C頻段高效率功率輸齣.
연제료일충성능우량적전고태C빈단고효솔이상담화가( GaN)공솔방대기모괴.개소료해공방모괴설계방안급공작원리,병급출료해공방모괴기술삼수실험측시결과.해모괴수출공솔30 W,대관10 MHz,대유6위이상공능,구유C빈단고빈솔、고태、소형화、고효솔、고공솔밀도、고격천전압특성,시일충목전국내외상무유사집성설계적최신고성능담화가( GaN)공솔방대기모괴.인기공방모괴수출말급채용료미국Cree공사제삼대관금대GaN공방관우화설계,실현료고태C빈단고효솔공솔수출.
@@@@A highefficiency solidstate Cband phase shifted gallium nitride (GaN) power amplifier module with excellent performance has been developed . The design scheme and working principle of GaN power amplifier module are introduced, and the experimental test results of power amplifier module technical paramters are given. The output power of the module is 30 W (CW), bandwidth is 10 MHz, with 6 bit phase shift. It is featured by Cband highfrequency, high efficiency, high power density and high breakdown voltage . Currently, it is a latest highperformance GaN power amplifier module with no similar intergrated design at home and abroad . The last stage of the power amplifier is optimized by using a third generation wide bandgap GaN amplifier tube from the American Cree Ltd . It can realize all solidstate Cband highefficiency output power .