CAJ | 학술논문

本文针对低少子寿命铸造多晶硅片进行试验,通过一种将多温度梯度磷扩散吸杂工艺与低温退火工艺结合的新型低温退火吸杂工艺,去除低少子寿命多晶硅片中影响其电性能的Fe杂质及部分晶体缺陷,提高低少子寿命多晶硅所生产的太阳电池各项电性能.通过低温退火磷扩散吸杂工艺与其他磷扩散吸杂工艺的比较,证明了低温退火吸杂工艺具有更好的磷吸杂和修复晶体缺陷的作用. IV-measurement发现经过低温退火工艺处理后的低少子寿命多晶硅,制备的太阳电池光电转换效率比其他实验组高0.2%,表明该工艺能有效地提高低少子寿命多晶硅太阳电池各项电性能参数及电池质量.本研究结果表明新型低温退火磷吸杂工艺可将低少子寿命硅片应用于大规模太阳电池生产中,提高铸造多晶硅材料在太阳能领域的利用率,节约铸造多晶硅的生产成本.
본문침대저소자수명주조다정규편진행시험,통과일충장다온도제도린확산흡잡공예여저온퇴화공예결합적신형저온퇴화흡잡공예,거제저소자수명다정규편중영향기전성능적Fe잡질급부분정체결함,제고저소자수명다정규소생산적태양전지각항전성능.통과저온퇴화린확산흡잡공예여기타린확산흡잡공예적비교,증명료저온퇴화흡잡공예구유경호적린흡잡화수복정체결함적작용. IV-measurement발현경과저온퇴화공예처리후적저소자수명다정규,제비적태양전지광전전환효솔비기타실험조고0.2%,표명해공예능유효지제고저소자수명다정규태양전지각항전성능삼수급전지질량.본연구결과표명신형저온퇴화린흡잡공예가장저소자수명규편응용우대규모태양전지생산중,제고주조다정규재료재태양능영역적이용솔,절약주조다정규적생산성본.
@@@@A new low-temperature annealing phosphorous gettering process (LTAPGP) was developed to improve the electrical properties of multi-crystalline silicon which has a low minority carrier lifetime. LTAPGP combined a multi-plateau temperature phosphorous gettering process and a low-temperature annealing process. LTAPGP can remove the iron impurities and crystallographic defects of multi-crystalline silicon, and improve the electrical properties of silicon solar cells that were produced from low minority carrier lifetime silicon wafers. Compared with multi-plateau and two-plateau temperature phosphorous gettering process, LTAPGP was more effective in gettering iron impurities and repairing crystallographic defects. The multi-crystalline silicon wafers with a low minority carrier lifetime went through an LTAPGP process were utilized to produce solar cells. The IV-measurement data prove that the efficiency of the new solar cells is 0.2% higher than that of specimens subject to the multi-plateau and two-plateau temperature processes. The results indicat that LTAPGP can make the low minority carrier lifetime silicon wafers to be used in solar cell industry, improve the utilization ratio and reduce the production cost of cast polysilicon.