CAJ | 학술논문

采用直流磁控溅射工艺,在一定条件下通过控制溅射时间,在钠钙玻璃上制备了不同厚度的用于Cu(Inx, Ga1?x)Se2薄膜太阳电池背接触材料的Mo薄膜,并利用X射线衍射(XRD)、场发射扫描电子显微镜(SEM)、四探针测试仪、台阶仪研究了厚度对溅射时间、薄膜微结构、电学性能及力学性能的交互影响. Mo薄膜的厚度与溅射时间呈线性递增关系;随厚度的增大, Mo薄膜(110)和(211)面峰强均逐渐增大,择优生长从(110)方向逐渐向(211)方向转变,方块电阻值只随(110)方向上的生长而急剧减小直到一特定值约2?/□,电导率随薄膜的(110)择优取向程度的降低而线性减小直到一特定值约0.96×10?4?·cm;Mo薄膜内部是一种多孔的长形簇状颗粒和颗粒间隙交织的结构,并处于拉应力态,其内部应变随薄膜厚度的增大而减小.
채용직류자공천사공예,재일정조건하통과공제천사시간,재납개파리상제비료불동후도적용우Cu(Inx, Ga1?x)Se2박막태양전지배접촉재료적Mo박막,병이용X사선연사(XRD)、장발사소묘전자현미경(SEM)、사탐침측시의、태계의연구료후도대천사시간、박막미결구、전학성능급역학성능적교호영향. Mo박막적후도여천사시간정선성체증관계;수후도적증대, Mo박막(110)화(211)면봉강균축점증대,택우생장종(110)방향축점향(211)방향전변,방괴전조치지수(110)방향상적생장이급극감소직도일특정치약2?/□,전도솔수박막적(110)택우취향정도적강저이선성감소직도일특정치약0.96×10?4?·cm;Mo박막내부시일충다공적장형족상과립화과립간극교직적결구,병처우랍응력태,기내부응변수박막후도적증대이감소.
In this study, Mo thin films which used in Cu(Inx Ga1?x)Se2 (CIGS) thin film solar cells as back conduct were deposited on soda-lime glass substrates via DC magnetron sputtering under certain conditions. A series of Mo thin films prepared of various thicknesses was obtained in different sputtering deposition times. The microstructure, electrical resistivity and mechanical strain property of Mo thin films, which may be varied by controlling the thickness, were investigated by XRD, SEM, four probes technology and Scotch tape test. As the results showed, the thicknesses of the films increased linearly with the sputtering time. With increasing thickness, the films’ crystal growth showed a change from (110) preferred orientation to (211) preferred orientation. The sheet resistance sharply reduced to 2?/□with the increase of (110) peak height and the resistivity linearly decreased to 0.96×10?4?·cm due to the level of (110) preferred orientation. The films surface has porous (fish-like) grain morphology and intergranular voids. All the films are in a tensile state, and the inner strain decreased with the increase of the thickness.