CAJ | 학술논문

为了抑制埋层注氮导致的埋层内正电荷密度的上升,本文采用氮氟复合注入方式,向先行注氮的埋层进行了注氮之后的氟离子注入,并经适当的退火,对埋层进行改性.利用高频电容-电压(C-V)表征技术,对复合注入后的埋层进行了正电荷密度的表征.结果表明,在大多数情况下,氮氟复合注入能够有效地降低注氮埋层内的正电荷密度,且其降低的程度与注氮后的退火时间密切相关.分析认为,注氟导致注氮埋层内的正电荷密度降低的原因是在埋层中引入了与氟相关的电子陷阱.另外,实验还观察到,在个别情况下,氮氟复合注入引起了埋层内正电荷密度的进一步上升.结合测量结果,讨论分析了该现象产生的原因.
위료억제매층주담도치적매층내정전하밀도적상승,본문채용담불복합주입방식,향선행주담적매층진행료주담지후적불리자주입,병경괄당적퇴화,대매층진행개성.이용고빈전용-전압(C-V)표정기술,대복합주입후적매층진행료정전하밀도적표정.결과표명,재대다수정황하,담불복합주입능구유효지강저주담매층내적정전하밀도,차기강저적정도여주담후적퇴화시간밀절상관.분석인위,주불도치주담매층내적정전하밀도강저적원인시재매층중인입료여불상관적전자함정.령외,실험환관찰도,재개별정황하,담불복합주입인기료매층내정전하밀도적진일보상승.결합측량결과,토론분석료해현상산생적원인.
Nitrogen ions implanted into the buried oxide layer can increase the total dose radiation hardness of silicon on insulator (SOI) materials. However, the obvious increase in positive charge density in the buried layer with high dose of nitrogen implantation leads to a negative effect on the technology of nitrogen implantation into buried oxide. In order to suppress the increase in positive charge density in the nitrogen-implanted buried layer, co-implantation of nitrogen and fluorine is used to implant fluorine into the nitrogen-implanted buried layer. High-frequency voltage-capacitance (C-V) technique is used to characterize the positive charge density in the buried layer. Results show that, in most cases, using the co-implantation of nitrogen and fluorine can significantly reduce the positive charge density in the nitrogen-implanted buried layer. At the same time, it is also found that further increase of the positive charge density induced by fluorine implantation in the nitrogen-implanted buried layer can occur in particular cases. It is proposed that the decrease in the positive charge density in the fluorine and nitrogen-implanted buried layer is due to the introduction of electron traps into the buried layer through fluorine implantation.