物理学报
物理學報
물이학보
2013年
11期
470-481
,共12页
声表面波%压电多层结构%有效介电常数%刚度矩阵法
聲錶麵波%壓電多層結構%有效介電常數%剛度矩陣法
성표면파%압전다층결구%유효개전상수%강도구진법
surface acoustic wave%piezoelectric multilayered structure%effective permittivity%stiffness matrix method
本文首先以刚度矩阵法为基础,给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式.然后以此为工具,分别计算了多晶ZnO(002)薄膜/多晶金刚石和单晶ZnO(002)薄膜/多晶金刚石的声表面波特性,并根据计算结果及设计制作声表面波器件的要求,对ZnO膜厚的选择进行了详细地分析.最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求.
本文首先以剛度矩陣法為基礎,給齣瞭ZnO薄膜/金剛石在四種不同激勵條件下的有效介電常數計算公式.然後以此為工具,分彆計算瞭多晶ZnO(002)薄膜/多晶金剛石和單晶ZnO(002)薄膜/多晶金剛石的聲錶麵波特性,併根據計算結果及設計製作聲錶麵波器件的要求,對ZnO膜厚的選擇進行瞭詳細地分析.最後討論瞭ZnO/金剛石/Si複閤晶片可以忽略Si襯底對聲錶麵特性影響時對金剛石膜厚的要求.
본문수선이강도구진법위기출,급출료ZnO박막/금강석재사충불동격려조건하적유효개전상수계산공식.연후이차위공구,분별계산료다정ZnO(002)박막/다정금강석화단정ZnO(002)박막/다정금강석적성표면파특성,병근거계산결과급설계제작성표면파기건적요구,대ZnO막후적선택진행료상세지분석.최후토론료ZnO/금강석/Si복합정편가이홀략Si츤저대성표면특성영향시대금강석막후적요구.
In the last twenty years, the ZnO/diamond layered structure for surface acoustic wave (SAW) devices have been widely studied and have attracted great attention, due to its advantages of high acoustic velocity, high electromechanical coupling coefficient and high power durability. Distinguished from the conventional single-crystal substrate (such as quartz, lithium niobate), ZnO/diamond layered structure shows dispersive SAW properties, which can be excited by four ways: interdigital transducer (IDT)/ZnO/diamond, IDT/ZnO/shorting metal/diamond, ZnO/IDT/diamond, and shorting metal/ZnO/IDT/diamond. In this paper, the formulation based on the stiffness matrix method for calculating the effective permittivity of ZnO/diamond layered structure under four excitation conditions is given first. Then, by using this formulation, the SAW properties of the monocrystalline ZnO (002) film on polycrystalline diamond and the polycrystalline ZnO (002) film on polycrystalline diamond are calculated respectively. Based on the results of calculation, the ZnO film thicknesses qualified to design and fabricate SAW device are analyzed in detail. Finally, we discuss the function of diamond film thickness of ZnO/diamond/Si layered structure so as to avoid the influence of the silicon substrate on the SAW properties.