东方电气评论
東方電氣評論
동방전기평론
2014年
4期
1-3,10
,共4页
IGBT%沟槽%场截止%薄片键合
IGBT%溝槽%場截止%薄片鍵閤
IGBT%구조%장절지%박편건합
IGBT%trench%field stop%thinner wafer bonding
尽管第5代IGBT已经成为电力电子行业的主流产品,但是却始终未能实现国产自给,主要原因是核心技术未能实现自主化。本文针对生产第5代IGBT的3项核心技术,即沟槽技术、场截止技术和薄片键合技术分别进行阐述和分析,3项技术的难点分别体现在沟槽形貌控制、深埋层的制备以及键合方式的选择和实施。逐一突破3项技术将为先进IGBT的国产化铺平道路。
儘管第5代IGBT已經成為電力電子行業的主流產品,但是卻始終未能實現國產自給,主要原因是覈心技術未能實現自主化。本文針對生產第5代IGBT的3項覈心技術,即溝槽技術、場截止技術和薄片鍵閤技術分彆進行闡述和分析,3項技術的難點分彆體現在溝槽形貌控製、深埋層的製備以及鍵閤方式的選擇和實施。逐一突破3項技術將為先進IGBT的國產化鋪平道路。
진관제5대IGBT이경성위전력전자행업적주유산품,단시각시종미능실현국산자급,주요원인시핵심기술미능실현자주화。본문침대생산제5대IGBT적3항핵심기술,즉구조기술、장절지기술화박편건합기술분별진행천술화분석,3항기술적난점분별체현재구조형모공제、심매층적제비이급건합방식적선택화실시。축일돌파3항기술장위선진IGBT적국산화포평도로。
Although Gen-5 IGBT already become the main product dominating the electric electronic area in China, few of them are manufactured by ourselves due to lack of core technology. This paper provides analyses of three essential issues of the Gen-5 IGBT technology, i. e. , trench etching, field stop ( FS ) and temporary bonding ( TWB ) , revealing respective bottlenecks to be shape controlling, FS layer forming, and method choice and operation. Manufacturing of the advanced IGBT in China will be realized once the three essential issues have been found their solutions.
