CAJ | 학술논문

通过计算得出了蒸发源位于倒圆锥面正下方外部镀膜时锥面上各点的膜厚方程，并对整个锥面上膜厚均匀性进行了理论分析。结果表明：当圆锥面形状固定时，蒸发源与圆锥底圆圆心距离增大使锥面上膜厚均匀性变好；当蒸发源固定时，增大底圆半径导致锥面上膜厚均匀性变差。在同样的配置下，蒸发源为点源或小平面源时锥面上膜厚均匀性的变化趋势一致，小平面源蒸镀比点源蒸镀时圆锥面上膜厚均匀性差。
통과계산득출료증발원위우도원추면정하방외부도막시추면상각점적막후방정，병대정개추면상막후균균성진행료이론분석。결과표명：당원추면형상고정시，증발원여원추저원원심거리증대사추면상막후균균성변호；당증발원고정시，증대저원반경도치추면상막후균균성변차。재동양적배치하，증발원위점원혹소평면원시추면상막후균균성적변화추세일치，소평면원증도비점원증도시원추면상막후균균성차。
The theory study of film thickness distribution deposited on inverted conical surface with the evaporation source directly below the substrate is reported. The film thickness on every position of the cone and the film thickness uni-formity of the cone can be received by calculation under different geometric configuration. The results show when the evaporation source is point source or small plane source and conical surface shape is fixed,the film thickness uniformity of cone becomes better as the distance of evaporation source and central of the cone bottom. And when the evaporation source is fixed,the increase of cone bottom radius results to film thickness uniformity of cone becomes worse. Under the same configuration,the thickness uniformity of cone with small plane source is worse than point source.