CAJ | 학술논문

为了研究0.13μm体硅工艺的抗总剂量效应加固，分别对两种结构的H形管的性能做了仿真研究。仿真结果表明，两种结构的H形管有基本相同的转移特性曲线，但有一种结构的H形管有较大的饱和电流；同时，此结构的H形管还有较强的抗总剂量性能，可考虑在抗辐照要求的集成电路中使用。
위료연구0.13μm체규공예적항총제량효응가고，분별대량충결구적H형관적성능주료방진연구。방진결과표명，량충결구적H형관유기본상동적전이특성곡선，단유일충결구적H형관유교대적포화전류；동시，차결구적H형관환유교강적항총제량성능，가고필재항복조요구적집성전로중사용。
Two different structures of H-gate MOSFETs’ performances are simulated,which are used to study total dose radiation hardness of commercial 0.13 μm CMOS process. Simulation results show that two kinds of different H-gate MOSFETs have basically same transfer characteristics curves. But one of two structures H-gate MOSFETs has bigger saturation current and radiation-hardened for radiation applications. This kind of H-gate MOSFETs could be considered to be used in the radiation hardened ICs.