CAJ | 학술논문

研究中提出了用于描述HCI(热载流子注入)效应的MOSFET可靠性模型及其建模方法，在原BSIM3模型源代码中针对7个主要参数，增加了其时间调制因子，优化并拟合其与HCI加压时间( Stress time)的关系式，以宽长比为10μm/0.5μm 5 V的MOSFET为研究对象，在开放的SPICE和BSIM3源代码对模型库文件进行修改，实现了该可靠性模型。实验表明，该模型的测量曲线与参数提取后的I-V仿真曲线十分吻合，因而适用于预测标准工艺MOS器件在一定工作电压及时间下性能参数的变化，进而评估标准工艺器件的寿命。
연구중제출료용우묘술HCI(열재류자주입)효응적MOSFET가고성모형급기건모방법，재원BSIM3모형원대마중침대7개주요삼수，증가료기시간조제인자，우화병의합기여HCI가압시간( Stress time)적관계식，이관장비위10μm/0.5μm 5 V적MOSFET위연구대상，재개방적SPICE화BSIM3원대마대모형고문건진행수개，실현료해가고성모형。실험표명，해모형적측량곡선여삼수제취후적I-V방진곡선십분문합，인이괄용우예측표준공예MOS기건재일정공작전압급시간하성능삼수적변화，진이평고표준공예기건적수명。
An innovative modeling method is presented for describing BSIM3v3 SPICE reliability model of MOSFET due to hot carrier injection. Seven main parameters associated with HCI are optimized in Original BSIM3v3 source code,and increased their relevant time modulating coefficient which can be acquired seven equations. In this work, 5 V operating voltage nMOSFET with 10 μm gate length and 0.5 μm gate width is prepared. The I-V simulation curve after parameters extraction fit the measured results very well,so an accurate new model of MOSFETs reliability model is achieved. Using the BSIM3v3 SPICE reliability model,the typical Idsat,Vth,Idlin,Gmax degradation as a func-tion of stress time is plotted( achieved) and the lifetime of MOSFETs can be evaluated.