CAJ | 학술논문

为了更好的对CMOS图像传感器中光电二极管的光电转换物理现象进行研究，需要建立正确合适的光电二极管数学物理模型。通过少数载流子稳态连续方程建立光电二极管的一维物理模型，求解方程后，代入参数在MATLAB中对两层结构的n+/p- sub型和n- well/p- sub型，以及三层结构的p+/n- well/p- sub型二极管进行了计算模拟，得到了3种二极管响应率与波长的关系曲线。最后将结果与实际值进行了对比分析，确认了模型能够在一定程度上反映实际的物理情况。
위료경호적대CMOS도상전감기중광전이겁관적광전전환물리현상진행연구，수요건립정학합괄적광전이겁관수학물리모형。통과소수재류자은태련속방정건립광전이겁관적일유물리모형，구해방정후，대입삼수재MATLAB중대량층결구적n+/p- sub형화n- well/p- sub형，이급삼층결구적p+/n- well/p- sub형이겁관진행료계산모의，득도료3충이겁관향응솔여파장적관계곡선。최후장결과여실제치진행료대비분석，학인료모형능구재일정정도상반영실제적물리정황。
In order to research on the photoelectric conversion phenomena of photodiode for CMOS image sensor,we construct an accurate and reasonable mathematical-physical model. We utilize the minority carrier equilibrium conti-nuity equations to establish an one-dimensional physical model of photodiode. By means of MATLAB,the relation-ship between responsivity and wavelength of photodiode( including three types:two-layer structure of n+/p-sub type and n-well/p-sub type,and three-layer structure of p+/n-well/p-sub type) is found out. Finally,the simulation re-sults are analyzed and compared with practical data. We confirmed the model can basically reflect the actual physi-cal situation.