CAJ | 학술논문

采用碳膜覆盖于SiC晶片表面,作为SiC离子注入后高温激活退火的保护层,1650℃20 min高温退火后,有碳膜保护的SiC晶片表面粗糙度RMS只有0.6 nm,无明显形貌退化。 AZ5214光刻胶在不同温度条件Ar气氛围下碳化40 min,光刻胶均转变为纳米晶体石墨化碳膜。进行Raman测试表明,碳膜D峰和G峰的比值随碳化温度升高而增大,800℃高温碳化形成的碳膜ID：IG 达到3.57,对高温激活退火SiC表面保护效果最佳,经过Ar气氛围下1650℃20 min激活退火后,有碳膜保护和无碳膜保护的SiC表面粗糙度RMS分别为0.6 nm和3.6 nm。
채용탄막복개우SiC정편표면,작위SiC리자주입후고온격활퇴화적보호층,1650℃20 min고온퇴화후,유탄막보호적SiC정편표면조조도RMS지유0.6 nm,무명현형모퇴화。 AZ5214광각효재불동온도조건Ar기분위하탄화40 min,광각효균전변위납미정체석묵화탄막。진행Raman측시표명,탄막D봉화G봉적비치수탄화온도승고이증대,800℃고온탄화형성적탄막ID：IG 체도3.57,대고온격활퇴화SiC표면보호효과최가,경과Ar기분위하1650℃20 min격활퇴화후,유탄막보호화무탄막보호적SiC표면조조도RMS분별위0.6 nm화3.6 nm。
A carbon film formed on an ion-implanted SiC wafer was used as cap layer of the SiC wafer surface which was in the activation process at high temperature. The roughness RMS of SiC wafer surface with carbon film cap layer was on-ly 0.6 nm after activation at 1 650℃ for 20 minutes,which show without obvious physical degradation. The photoresist AZ5214 was carbonized for 40 minute at several different temperatures in Argon atmosphere,and all of the photoresist was graphitized nanocrystalline carbon film. Raman tests indicated that the ratio of D peak to G peak increased by higher tem-perature. The ID:IG of the carbon film carbonized at 800℃reached to 3.57,which was the best protected layer for SiC wa-fer surface. After activation at 1 650℃ for 20 min in Argon atmosphere,the roughness(RMS)of the SiC wafer surface covered with the carbon film was 0.6 nm,while RMS was 3.6 nm without carbon cap layer.