CAJ | 학술논문

以乙炔作为碳源，抛光铜片作为衬底，采用热丝CVD法低温生长了石墨烯。通过拉曼散射光谱和紫外-可见分光光度计分析了样品的性能。结果表明，灯丝温度的提高有助于乙炔分解为对石墨烯晶粒形核生长比较有利的含碳活性基团。衬底温度的升高增强了铜衬底对石墨烯生长的催化作用。通过调整气体流量中乙炔的比例，可以有效降低石墨烯薄膜的层数。最终在乙炔浓度为2%，衬底温度为450℃的低衬底温度条件下制得了的单层石墨烯纳米晶薄膜。
이을결작위탄원，포광동편작위츤저，채용열사CVD법저온생장료석묵희。통과랍만산사광보화자외-가견분광광도계분석료양품적성능。결과표명，등사온도적제고유조우을결분해위대석묵희정립형핵생장비교유리적함탄활성기단。츤저온도적승고증강료동츤저대석묵희생장적최화작용。통과조정기체류량중을결적비례，가이유효강저석묵희박막적층수。최종재을결농도위2%，츤저온도위450℃적저츤저온도조건하제득료적단층석묵희납미정박막。
Graphene films were prepared on copper foil at low temperature by hot-filament chemical vapor deposition, using acetylene as carbon source. Films deposited under different conditions were characterized by Raman spectro-scopy and UV/VIS Spectrophotometer. The results indicated that the raise of the temperature of hot-filament helped graphene to grow better since it improved decomposition of acetylene to carbon active groups which could promote the formation of graphene. The raise of substrate temperature also improved the catalytics capability of copper substrate. The layer number of graphene could be reduced by controlling the percentage of acetylene in the mix gas. Finally,a single nanocrystalline graphene layer was obtained at a low substrate temperature(450℃),with 2% acetylene.