功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2014年
24期
24091-24094
,共4页
林亚丽%朱俊%吴智鹏%刘兴鹏%吴诗捷%李俊峰
林亞麗%硃俊%吳智鵬%劉興鵬%吳詩捷%李俊峰
림아려%주준%오지붕%류흥붕%오시첩%리준봉
Pb (Hf0.3 Ti0.7 )O3%铁电薄膜%脉冲激光沉积%微观结构%电学性能
Pb (Hf0.3 Ti0.7 )O3%鐵電薄膜%脈遲激光沉積%微觀結構%電學性能
Pb (Hf0.3 Ti0.7 )O3%철전박막%맥충격광침적%미관결구%전학성능
Pb(Hf0.3 Ti0.7 )O3%ferroelectric films%pulsed laser deposition%microstructures%ferroelectric properties
采用脉冲激光沉积方法在不同温度下生长Pb(Hf0.3 Ti0.7)O3(PHT)铁电薄膜,利用各种表征手段测试并分析薄膜的微观结构和电性能.研究表明,生长温度为400℃沉积的PHT薄膜具有良好的(111)择优取向;PHT 薄膜矫顽场(2Ec)为390 kV/cm,剩余极化强度(2Pr)为53.1μC/cm2,经1.5×109次翻转后剩余极化强度保持85%;PHT 薄膜绝缘性能良好,相对介电常数约为540.PHT 薄膜有望应用于铁电随机存储器.
採用脈遲激光沉積方法在不同溫度下生長Pb(Hf0.3 Ti0.7)O3(PHT)鐵電薄膜,利用各種錶徵手段測試併分析薄膜的微觀結構和電性能.研究錶明,生長溫度為400℃沉積的PHT薄膜具有良好的(111)擇優取嚮;PHT 薄膜矯頑場(2Ec)為390 kV/cm,剩餘極化彊度(2Pr)為53.1μC/cm2,經1.5×109次翻轉後剩餘極化彊度保持85%;PHT 薄膜絕緣性能良好,相對介電常數約為540.PHT 薄膜有望應用于鐵電隨機存儲器.
채용맥충격광침적방법재불동온도하생장Pb(Hf0.3 Ti0.7)O3(PHT)철전박막,이용각충표정수단측시병분석박막적미관결구화전성능.연구표명,생장온도위400℃침적적PHT박막구유량호적(111)택우취향;PHT 박막교완장(2Ec)위390 kV/cm,잉여겁화강도(2Pr)위53.1μC/cm2,경1.5×109차번전후잉여겁화강도보지85%;PHT 박막절연성능량호,상대개전상수약위540.PHT 박막유망응용우철전수궤존저기.
The Pb(Hf0.3 Ti0.7 )O3 (PHT)ferroelectric thin films were fabricated by pulsed laser deposition at dif-ferent growth temperatures.The microstructures and ferroelectric properties of the PHT thin films were char-acterized with X-ray diffraction,atomic force microscope,RT66A ferroelectric tester and HP4155C semicon-ductor parameter analyzer.The PHT thin films growth at 400 ℃ had good (111)preferred orientation.The fer-roelectric test of the PHT films deposited at 400 ℃ demonstrated that the remnant polarization was 53.1μC/cm2 ,the coercive field was 390 kV/cm,and remnant polarization was kept at the value of 85% after 1.5 × 109 rollover.The dielectric measurement showed that the dielectric constant of the PHT films growth at 400 ℃ was 540.With the well-behaved properties,the PHT ferroelectric thin films is expected to be applied to ferroelectric random access memory (FeRAM).