功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2014年
24期
24087-24090
,共4页
石墨烯%氧等离子体轰击%缺陷%电学特性%拉曼光谱
石墨烯%氧等離子體轟擊%缺陷%電學特性%拉曼光譜
석묵희%양등리자체굉격%결함%전학특성%랍만광보
graphene%oxygen-plasma etching%defects%electrical properties%Raman spectra
对机械剥离在Si O 2表面的多层石墨烯进行氧等离子体刻蚀，通过拉曼光谱、原子力显微镜和电学性能表征来研究氧等离子体轰击对石墨烯特性的影响。结果表明氧等离子体轰击会在表层石墨烯中引入大量缺陷，大量缺陷的存在又会诱导对石墨烯的进一步刻蚀，从而实现逐层刻蚀石墨烯。另外，氧等离子体轰击的过程在做了金属电极的石墨烯中引入金属颗粒等其它物质，这几方面的原因最终导致在氧等离子体刻蚀石墨烯的过程中石墨烯的两端电导呈现近似线性的减小，石墨烯出现n型掺杂效应。
對機械剝離在Si O 2錶麵的多層石墨烯進行氧等離子體刻蝕，通過拉曼光譜、原子力顯微鏡和電學性能錶徵來研究氧等離子體轟擊對石墨烯特性的影響。結果錶明氧等離子體轟擊會在錶層石墨烯中引入大量缺陷，大量缺陷的存在又會誘導對石墨烯的進一步刻蝕，從而實現逐層刻蝕石墨烯。另外，氧等離子體轟擊的過程在做瞭金屬電極的石墨烯中引入金屬顆粒等其它物質，這幾方麵的原因最終導緻在氧等離子體刻蝕石墨烯的過程中石墨烯的兩耑電導呈現近似線性的減小，石墨烯齣現n型摻雜效應。
대궤계박리재Si O 2표면적다층석묵희진행양등리자체각식，통과랍만광보、원자력현미경화전학성능표정래연구양등리자체굉격대석묵희특성적영향。결과표명양등리자체굉격회재표층석묵희중인입대량결함，대량결함적존재우회유도대석묵희적진일보각식，종이실현축층각식석묵희。령외，양등리자체굉격적과정재주료금속전겁적석묵희중인입금속과립등기타물질，저궤방면적원인최종도치재양등리자체각식석묵희적과정중석묵희적량단전도정현근사선성적감소，석묵희출현n형참잡효응。
Exfoliated few layers graphene on silicon oxide were exposed into oxygen-plasma,Raman spectra, Atomic force microscope (AFM)and electrical measurement are used to characterize the influence of oxygen-plasma etching on the properties of graphene.Results show that lots of defects will be introduced to graphene by oxygen-plasma etching,and these defects will act as the initial point for the following etch,and layer by layer etching is realized.In addition,metal particles and organic materials deposition can be introduced during the ox-ygen-plasma etching.All these factors lead to linear decrease of the two-terminal conductance and n-type doping characteristics of graphene.
