CAJ | 학술논문

采用直流偏置应力法对蓝宝石衬底上的 In-AlN/GaN HEMT 器件的电流崩塌效应进行了研究。实验结果表明，在关态和开态应力后，器件直流特性明显退化，退化程度随偏置应力电压和应力时间的累积而增大。理论分析和器件仿真结果表明，关态应力引起的性能退化主要是由栅泄漏电流填充表面态形成的虚栅造成的；而开态应力引起的退化是沟道热电子被势垒层陷阱及表面态俘获产生的。因此，只有消除表面态和势垒层陷阱或者隔绝表面态形成的虚栅才能有效抑制电流崩塌。偏置应力引起的性能退化是可逆过程，在无外界激励时，经过10 d左右的静置，器件基本恢复初始性能。
채용직류편치응역법대람보석츤저상적 In-AlN/GaN HEMT 기건적전류붕탑효응진행료연구。실험결과표명，재관태화개태응력후，기건직류특성명현퇴화，퇴화정도수편치응력전압화응력시간적루적이증대。이론분석화기건방진결과표명，관태응력인기적성능퇴화주요시유책설루전류전충표면태형성적허책조성적；이개태응력인기적퇴화시구도열전자피세루층함정급표면태부획산생적。인차，지유소제표면태화세루층함정혹자격절표면태형성적허책재능유효억제전류붕탑。편치응력인기적성능퇴화시가역과정，재무외계격려시，경과10 d좌우적정치，기건기본회복초시성능。
Drain current collapses under DC-bias-induced stress in passivated InAlN/GaN high electron mobility transistor grown on sapphire substrate were investigated.The experimental results indicated that the degrada-tion of DC characteristics occurred after both the off-state stress and on-state stress,and the degradation degree increases with the accumulation of bias voltage and time.Theoretical analysis and device simulation results shown that the drain current collapse under the off-state stress was due to the virtual gate caused by surface state,while the collapse mechanism under the on-state stress was dominated by the hot-electron effect.In addi-tion,we found that the current collapse under bias-stress was a reversible process.The degraded current can al-most restore to the original values after ten days in the absence of any external exciting source.