CAJ | 학술논문

基于北京HI‐13串列加速器质子源及技术改进工作，获得2～15MeV低能质子束流。针对商业级65nm工艺4M×18bit大容量随机静态存储器（SRAM），开展了质子单粒子翻转实验研究。实验结果表明，低能质子通过直接电离机制可在存储器中引起显著的单粒子翻转，其翻转截面较核反应机制引起的翻转截面大2～3个数量级。结合实验数据分析了质子翻转机制、LET值及射程、临界电荷及空间软错误率等，分析结果表明，实验器件翻转临界电荷约为0.97fC，而低能质子超过高能质子成为质子软错误率的主要贡献因素。
기우북경HI‐13천렬가속기질자원급기술개진공작，획득2～15MeV저능질자속류。침대상업급65nm공예4M×18bit대용량수궤정태존저기（SRAM），개전료질자단입자번전실험연구。실험결과표명，저능질자통과직접전리궤제가재존저기중인기현저적단입자번전，기번전절면교핵반응궤제인기적번전절면대2～3개수량급。결합실험수거분석료질자번전궤제、LET치급사정、림계전하급공간연착오솔등，분석결과표명，실험기건번전림계전하약위0.97fC，이저능질자초과고능질자성위질자연착오솔적주요공헌인소。
Based on the Beijing HI‐13 tandem accelerator proton beam source and techni‐cal improvements ,2‐15 MeV low energy proton beam was obtained .Single event upset (SEU) test of low energy proton was carried out on commercial 65 nm 4M × 18 bit large capacity SRAM . The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism ,and the SEU cross section caused by this mechanism is about 2‐3 magnitude order larger than that caused by nuclear reaction mechanism .With the test data ,the proton upset mechanism ,LET and range ,critical charge ,and on‐orbit soft error rate (SER) were analyzed .The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER can be a significant contribution to total proton SER in space .