CAJ | 학술논문

嵌入式存储器易受到空间单粒子效应(Single-Event Effects, SEE)的影响。该文提出了一种单粒子效应失效率评估的方法，包含了单粒子翻转和单粒子瞬态扰动等效应对嵌入式存储器不同电路单元的具体影响，可对不同存储形式、不同容错方法的嵌入式存储器单粒子效应失效率进行定量评估。该文提出的评估方法在中国科学院电子学研究所自主研制的嵌入式可编程存储器试验芯片上得到了验证，地面单粒子模拟实验表明该文方法预测的失效率评估结果与实验测试结果的平均偏差约为10.5%。
감입식존저기역수도공간단입자효응(Single-Event Effects, SEE)적영향。해문제출료일충단입자효응실효솔평고적방법，포함료단입자번전화단입자순태우동등효응대감입식존저기불동전로단원적구체영향，가대불동존저형식、불동용착방법적감입식존저기단입자효응실효솔진행정량평고。해문제출적평고방법재중국과학원전자학연구소자주연제적감입식가편정존저기시험심편상득도료험증，지면단입자모의실험표명해문방법예측적실효솔평고결과여실험측시결과적평균편차약위10.5%。
Embedded memories are easily influenced by Single-Event Effects (SEE). A model to calculate the SEE failure rate of an embedded memory is proposed, which considers the likelihood that an single-event upset or single-event transient will become an error in different types of circuits. It can also be used for the quantitative analysis of SEE mitigation techniques for versatile memories. Experimental investigations are performed using heavy ion accelerators on an experimental embedded programmable memory, which is designed by Institute of Electronics, Chinese Academy of Sciences. The result of 10.5% average error verifies the effectiveness of the proposed model.