激光技术
激光技術
격광기술
LASER TECHNOLOGY
2015年
1期
135-139
,共5页
付奎%娄本浊%孙彦清%龙姝明%黄朝军
付奎%婁本濁%孫彥清%龍姝明%黃朝軍
부규%루본탁%손언청%룡주명%황조군
光谱学%光学特性%电场调制反射光谱%表面光电压光谱%激发荧光光谱%稀磁半导体%硒化锌铍锰%温度
光譜學%光學特性%電場調製反射光譜%錶麵光電壓光譜%激髮熒光光譜%稀磁半導體%硒化鋅鈹錳%溫度
광보학%광학특성%전장조제반사광보%표면광전압광보%격발형광광보%희자반도체%서화자피맹%온도
spectroscopy%optical property%electric field modulation reflectance spectroscopy%surface photo-voltage spectroscopy%photoluminescence excitation spectroscopy%diluted magnetic semiconductor%Zn0.95-x Be0.05 Mnx Se%tempera-ture
为了研究稀磁半导体Zn0.95-xBe0.05MnxSe (x分别为0.05,0.10,0.15,0.20)随温度变化的光学特性,采用电场调制反射光谱、表面光电压光谱及光激发荧光光谱等测量技术,进行了理论分析与实验验证,取得了一系列数据。结果表明,除x=0.1的样品外,其它样品的能隙会随Mn掺杂摩尔分数的增加而增大,这是由价带和导电中的电子和Mn中的d层电子彼此交换的相互作用产生的微小位移所致;温度升高时跃迁信号会向低能量方向移动,则是晶格-声子散射效应增加所致。
為瞭研究稀磁半導體Zn0.95-xBe0.05MnxSe (x分彆為0.05,0.10,0.15,0.20)隨溫度變化的光學特性,採用電場調製反射光譜、錶麵光電壓光譜及光激髮熒光光譜等測量技術,進行瞭理論分析與實驗驗證,取得瞭一繫列數據。結果錶明,除x=0.1的樣品外,其它樣品的能隙會隨Mn摻雜摩爾分數的增加而增大,這是由價帶和導電中的電子和Mn中的d層電子彼此交換的相互作用產生的微小位移所緻;溫度升高時躍遷信號會嚮低能量方嚮移動,則是晶格-聲子散射效應增加所緻。
위료연구희자반도체Zn0.95-xBe0.05MnxSe (x분별위0.05,0.10,0.15,0.20)수온도변화적광학특성,채용전장조제반사광보、표면광전압광보급광격발형광광보등측량기술,진행료이론분석여실험험증,취득료일계렬수거。결과표명,제x=0.1적양품외,기타양품적능극회수Mn참잡마이분수적증가이증대,저시유개대화도전중적전자화Mn중적d층전자피차교환적상호작용산생적미소위이소치;온도승고시약천신호회향저능량방향이동,칙시정격-성자산사효응증가소치。
In order to study the temperature-dependent optical properties of dilute magnetic semiconductor Zn0.95-xBe0.05MnxSe (x is 0.05, 0.10, 0.15, 0.20 respectively ), based on electric field modulation reflectance spectroscopy, surface photovoltage spectroscopy and fluorescence excitation spectra, theoretical analysis and experimental verification were made and a series of data were obtained.The results show that, the energy gap of the other samples, except the sample of x =0.1, would increase with the increase of Mn doped mole fraction, caused by the slight displacement of exchange interaction between the electrons of the valence band and the conductive band and the electrons of d generation of Mn.Because of the increase of lattice-phonon scattering effect, the transition signal will move to the direction of low energy when temperature elevates.