CAJ | 학술논문

以双层SiN 膜多晶硅太阳电池为研究对象，通过调整PECVD工艺参数制备不同折射率和厚度的双层氮化硅减反射膜太阳电池，并用玻璃、EVA和背板等将电池片封装成光伏组件，进行85℃、85%RH条件下组件电势诱导衰减(PID)实验。研究结果表明：(1)改变内层折射率和厚度保持外层较低的折射率时，双层氮化硅膜太阳电池均会发生严重的PID效应；(2)但随着外层折射率提高，电池PID效应显著减小，外层折射率≥2.15的电池PID实验600 h功率衰减小于5%；(3)双层氮化硅膜抗PID太阳电池的转化效率略低于普通太阳电池，但其组件的封装损失较小，与普通电池的组件功率相当，因此具有很好的应用前景。
이쌍층SiN 막다정규태양전지위연구대상，통과조정PECVD공예삼수제비불동절사솔화후도적쌍층담화규감반사막태양전지，병용파리、EVA화배판등장전지편봉장성광복조건，진행85℃、85%RH조건하조건전세유도쇠감(PID)실험。연구결과표명：(1)개변내층절사솔화후도보지외층교저적절사솔시，쌍층담화규막태양전지균회발생엄중적PID효응；(2)단수착외층절사솔제고，전지PID효응현저감소，외층절사솔≥2.15적전지PID실험600 h공솔쇠감소우5%；(3)쌍층담화규막항PID태양전지적전화효솔략저우보통태양전지，단기조건적봉장손실교소，여보통전지적조건공솔상당，인차구유흔호적응용전경。
Double-layer SiN film poly-crystal ine silicon solar cel was the research point. Different refractive index and thickness double-layer SiN film solar cel by modifying PECVD process were prepared. The cel s with glass, EVA, backsheet etc were encapsulated. PID (Potential Induced Degradation) test at 85℃, 85%RH was conducted. The results show (1)that the cel s with a low refractive index of outer SiNx layer cause serious PID effect regardless of the refractive index or thickness of inner SiN layer;(2), but as the outer layer refractive index increasing the cel s PID effects decreased conspicuously, the cel s with a outer layer refractive index≥2.15 past PID 600 h test with a power loss less than 5%;(3) compared to conventional cel , double-layers SiN film anti-PID solar cel efficiency is a slightly lower, but the cel to module encapsulation power loss is smal er and its module power is equivalent to conventional cel 's. Therefore, the application of this anti-PID solar cel is promising.