CAJ | 학술논문

基于0.5μm CMOS工艺，设计瞬态电压抑制(TVS)二极管。利用黑箱理论对该器件在高电压大电流下的反向工作特性建模，在 Matlab 数值模拟工具中利用所建模型仿真，获得了包含一次击穿、二次击穿(硬失效)点的反向 I–U特性曲线；基于 Silvaco TCAD 工艺器件仿真平台，经DC 仿真验证所建模型的准确性。仿真结果表明，2种方法获得的特性曲线基本吻合，本文所建数值模型能够预测 TVS二极管瞬态电压抑制时的电特性。
기우0.5μm CMOS공예，설계순태전압억제(TVS)이겁관。이용흑상이론대해기건재고전압대전류하적반향공작특성건모，재 Matlab 수치모의공구중이용소건모형방진，획득료포함일차격천、이차격천(경실효)점적반향 I–U특성곡선；기우 Silvaco TCAD 공예기건방진평태，경DC 방진험증소건모형적준학성。방진결과표명，2충방법획득적특성곡선기본문합，본문소건수치모형능구예측 TVS이겁관순태전압억제시적전특성。
Based on 0.5μm CMOS process,a Transient Voltage Suppressor(TVS) diode is designed. Using the black box theory to build the negative operating character under high voltage and high current of the device,the curve containing the first breakdown point and the second breakdown(hardware failure) point is obtained by Matlab. In order to configure the accuracy of the model, the Silvaco TCAD(Computer Aided Design Technology) device simulation platform is adopted. The curves of two strategies are basically equal. And the model built can predict the electronic characteristic of TVS diode when suppressing transient voltage.