CAJ | 학술논문

半导体激光二极管触发下砷化镓(GaAs)光导开关工作于雪崩模式，为此设计了异面体结构的 GaAs光导开关以提高开关场强。设计的开关芯片厚度为2 mm，电极间隙为3 mm，利用半导体激光二极管对开关进行触发实验。当开关充电电压超过8 kV后，开关输出脉冲幅度显著增强，输出脉冲前沿快于光脉冲，开关开始雪崩工作模式。随着开关电场不断增加，开关输出电压幅值也线性增加，但开关输出波形没有改变。对开关抖动进行测试，其测试结果显示开关偏压对抖动影响很大，随着开关偏压增加，开关抖动减小，当开关偏压升至15 kV时，开关获得最小抖动约500 ps。
반도체격광이겁관촉발하신화가(GaAs)광도개관공작우설붕모식，위차설계료이면체결구적 GaAs광도개관이제고개관장강。설계적개관심편후도위2 mm，전겁간극위3 mm，이용반도체격광이겁관대개관진행촉발실험。당개관충전전압초과8 kV후，개관수출맥충폭도현저증강，수출맥충전연쾌우광맥충，개관개시설붕공작모식。수착개관전장불단증가，개관수출전압폭치야선성증가，단개관수출파형몰유개변。대개관두동진행측시，기측시결과현시개관편압대두동영향흔대，수착개관편압증가，개관두동감소，당개관편압승지15 kV시，개관획득최소두동약500 ps。
Semiconductor laser diode triggered GaAs Photoconductive Semiconductor Switch(PCSS) works in avalanche mode, therefore, a vertical GaAs PCSS with bulk structure is fabricated to enhance the switch field. The proposed switch is of 2 mm thickness and 3 mm gap, and triggered by laser diode. When charge voltage exceeds 8 kV, the amplitude of output voltage impulse increases rapidly, and the output impulse front is faster than that of the laser impulse, which shows PCSS turning into avalanche mode. Along with the enhancement of switch electric field, the output voltage increases linearly, nevertheless, there are no changes on the output waveform. The switch jitter is tested, and the results show that switch bias voltage has great influence on switch jitter. Along with the increasing of switch bias voltage, the switch jitter reduces;and when bias voltage up to 15 kV, the lowest jitter of 500 ps is obtained.