光谱学与光谱分析
光譜學與光譜分析
광보학여광보분석
SPECTROSCOPY AND SPECTRAL ANALYSIS
2015年
1期
272-275
,共4页
谢文彬%朱永%龚天诚%陈俞霖%张洁
謝文彬%硃永%龔天誠%陳俞霖%張潔
사문빈%주영%공천성%진유림%장길
单壁碳纳米管%光电器件%内光电效应%光热电效应
單壁碳納米管%光電器件%內光電效應%光熱電效應
단벽탄납미관%광전기건%내광전효응%광열전효응
Single-walled carbon nanotube%Photoelectric device%Internal photoelectric effect%Photo-thermoelectric effect
制备了单壁碳纳米管薄膜光电器件,在偏压和激光器照射条件下可产生净光电流。分别研究了偏置电压、激光功率、照射位置对净光电流的影响。实验表明,激光照射薄膜中点,净光电流随着偏压的增大而增大,随激光功率的增大而趋于饱和,偏压为0.2 V ,激光功率为22.7 mW时,净光电流达到0.24μA ;无偏压,激光照射薄膜不同位置时,净光电流值关于器件中心对称分布,照射两端点输出最大光电流,照射中点输出趋于“0”。经分析,在偏压和激光照射薄膜中心位置的条件下,器件因内光电效应可产生净光电流;在无偏压和激光照射的条件下,因光热电效应可产生净光电流,并建立了温度模型,根据单壁碳纳米管的热电势特性推导出了净光电流与光照位置的关系,其符合实验结果;内光电和光热电效应是光电流产生、变化的原因,在偏压和激光照射的一般条件下,净光电流应是两种效应的叠加结果。器件所具有的光电特性使其在光伏器件、光传感器有应用的潜力。
製備瞭單壁碳納米管薄膜光電器件,在偏壓和激光器照射條件下可產生淨光電流。分彆研究瞭偏置電壓、激光功率、照射位置對淨光電流的影響。實驗錶明,激光照射薄膜中點,淨光電流隨著偏壓的增大而增大,隨激光功率的增大而趨于飽和,偏壓為0.2 V ,激光功率為22.7 mW時,淨光電流達到0.24μA ;無偏壓,激光照射薄膜不同位置時,淨光電流值關于器件中心對稱分佈,照射兩耑點輸齣最大光電流,照射中點輸齣趨于“0”。經分析,在偏壓和激光照射薄膜中心位置的條件下,器件因內光電效應可產生淨光電流;在無偏壓和激光照射的條件下,因光熱電效應可產生淨光電流,併建立瞭溫度模型,根據單壁碳納米管的熱電勢特性推導齣瞭淨光電流與光照位置的關繫,其符閤實驗結果;內光電和光熱電效應是光電流產生、變化的原因,在偏壓和激光照射的一般條件下,淨光電流應是兩種效應的疊加結果。器件所具有的光電特性使其在光伏器件、光傳感器有應用的潛力。
제비료단벽탄납미관박막광전기건,재편압화격광기조사조건하가산생정광전류。분별연구료편치전압、격광공솔、조사위치대정광전류적영향。실험표명,격광조사박막중점,정광전류수착편압적증대이증대,수격광공솔적증대이추우포화,편압위0.2 V ,격광공솔위22.7 mW시,정광전류체도0.24μA ;무편압,격광조사박막불동위치시,정광전류치관우기건중심대칭분포,조사량단점수출최대광전류,조사중점수출추우“0”。경분석,재편압화격광조사박막중심위치적조건하,기건인내광전효응가산생정광전류;재무편압화격광조사적조건하,인광열전효응가산생정광전류,병건립료온도모형,근거단벽탄납미관적열전세특성추도출료정광전류여광조위치적관계,기부합실험결과;내광전화광열전효응시광전유산생、변화적원인,재편압화격광조사적일반조건하,정광전류응시량충효응적첩가결과。기건소구유적광전특성사기재광복기건、광전감기유응용적잠력。
The single-walled carbon nanotube film photoelectric device was invented ,and it can generate net photocurrent under bias voltage when it is illuminated by the laser .The influences of bias voltage ,laser power and illuminating position on the net photocurrent were investigated .The experimental results showed that when the center of the film was illuminated ,the photocur-rent increased with the applied bias ,but tended to saturate as the laser power increased .As the voltage and the laser power reached 0.2 V and 22.7 mW respectively ,the photocurrent reached 0.24 μA .When the voltage was removed ,the photocurrent varied with the laser illuminating position on the film and its value was distributed symmetrically about the center of the device . The photocurrent reached maximum and almost zero respectively when the laser illuminated on two ends and the center of the film .Analysis proposes that the net photocurrent can be generated due to internal photoelectric effect when the device is under voltage and the laser illuminates on the center of the film .It can be also generated due to photo-thermoelectric effect when the device is under no voltage and the laser illuminates on the film ,and the relation between the net photocurrent and the illuminat-ing position was derived according to the nature of thermoelectric power of single-walled carbon nanotubes with the established temperature model ,which coincides with experimental result .Two effects are the reasons for the generation and variety of the net photocurrent and they superimpose to form the result of the net photocurrent when the device is under general conditions of voltage and laser illuminating position .The device has potential applications in the areas of photovoltaic device and optical sensor for its characteristic .