CAJ | 학술논문

为了提高光子晶格的衍射效率，加快晶格写入时间，尝试在掺Fe浓度相同的双掺Mg：Fe：LN晶体（ Fe：0.03 wt.%， Mg：2.0 mol）和Fe：LN晶体( Fe：0.03 wt.%)中分别用λ为488 nm半导体激光器和532 nm Nd：YGA固体激光器写入一维光子晶格，对比研究了两晶体内光子晶格最大衍射效率η和时间t的关系。实验结果表明，在双掺Mg：Fe：LN晶体内写入光子晶格时间比Fe：LN晶体所需时间短、衍射效率高。
위료제고광자정격적연사효솔，가쾌정격사입시간，상시재참Fe농도상동적쌍참Mg：Fe：LN정체（ Fe：0.03 wt.%， Mg：2.0 mol）화Fe：LN정체( Fe：0.03 wt.%)중분별용λ위488 nm반도체격광기화532 nm Nd：YGA고체격광기사입일유광자정격，대비연구료량정체내광자정격최대연사효솔η화시간t적관계。실험결과표명，재쌍참Mg：Fe：LN정체내사입광자정격시간비Fe：LN정체소수시간단、연사효솔고。
For improving the diffraction efficiency of photonic lattice and shortening lattice writing time, a 488 nm semiconductor laser and a 532 nm Nd:YAG solid laser are respectively used to write one-dimensional photonic lattice in double doped Mg:Fe:LN and Fe:LN crystal with the same doped Fe concentration. The relationship be?tween the maximum diffraction efficiency and time of the photonic lattice in the crystal is compared and researched. Experimental results show that the photonic lattice writing time in double doped Mg:Fe:LN crystal is shorter than that of Fe:LN crytal and the diffraction efficiency is higher than that of Fe:LN crystal.