CAJ | 학술논문

采用激光剥蚀电感耦合等离子体质谱( LA_ICP_MS)法研究激光晶体材料Cr∶ZnSe晶体中掺杂元素铬( Cr)的含量和分布。利用镀膜扩散掺杂方法,制备不同掺杂浓度的Cr∶ZnSe晶体标准样品作为固体标准物质,实现Cr∶ZnSe晶体中Cr的定量分析。 LA_ICP_MS法研究自制标准样品中Cr的分布均匀性,电感耦合等离子体光谱法测定其准确含量。通过激光点剥蚀和线扫描剥蚀采样,获得Cr元素的点位和含量分布信息,实现晶体中Cr的原位微区分析。标准工作曲线相关系数0.9992,检出限0.08 mg/kg。本方法可为不同生长条件下Cr∶ZnSe晶体中Cr的统计分布分析提供有效检测手段。
채용격광박식전감우합등리자체질보( LA_ICP_MS)법연구격광정체재료Cr∶ZnSe정체중참잡원소락( Cr)적함량화분포。이용도막확산참잡방법,제비불동참잡농도적Cr∶ZnSe정체표준양품작위고체표준물질,실현Cr∶ZnSe정체중Cr적정량분석。 LA_ICP_MS법연구자제표준양품중Cr적분포균균성,전감우합등리자체광보법측정기준학함량。통과격광점박식화선소묘박식채양,획득Cr원소적점위화함량분포신식,실현정체중Cr적원위미구분석。표준공작곡선상관계수0.9992,검출한0.08 mg/kg。본방법가위불동생장조건하Cr∶ZnSe정체중Cr적통계분포분석제공유효검측수단。
Laser ablation inductively coupled plasma mass spectrometry ( LA_ICP_MS ) was applied for the determination of doping element chromium( Cr) content and distribution in Cr∶ZnSe crystals. Several different Cr∶ZnSe crystals were prepared by diffusion method as reference material to solve the problem of accurate quantization. The homogeneity of Cr in these samples was characterized by LA_ICP_MS and the concentrations achieved by inductively coupled plasma atomic emission spectrometry ( ICP_AES ) . With signal pot and line scan sampling, the present method provided effective position and content distribution information of Cr in ZnSe crystals, achieved the in situ analysis. The correlation coefficient of Cr in calibration curve was 0. 9992 and the detection limit was 0. 08 mg/kg. It could provide effective means for the distribution statistics of doping element in different growth condition crystals.