核电子学与探测技术
覈電子學與探測技術
핵전자학여탐측기술
NUCLEAR ELECTRONICS & DETECTION TECHNOLOGY
2014年
7期
842-845
,共4页
杜继业%宋岩%郭明安%宋顾周%马继明
杜繼業%宋巖%郭明安%宋顧週%馬繼明
두계업%송암%곽명안%송고주%마계명
高压脉冲%MOSFET%脉冲产生器%驱动电路
高壓脈遲%MOSFET%脈遲產生器%驅動電路
고압맥충%MOSFET%맥충산생기%구동전로
high-voltage pulse%MOSFET%pulse generator%driving circuit
通过研究功率MOSFET器件的开关特性和脉冲产生技术,设计了互补推挽和集成芯片两种MOSFET栅驱动脉冲电路,其较好的驱动能力,极大的提升了MOSFET的开关速度,分别实现了上升(下降)时间小于5 ns和2.5 ns、输出幅度300~500 V、脉冲宽度5 ns~0.2ms可调的高速、高压的脉冲产生与放大。据此研制成功的脉冲产生器具有稳定性好、带负载能力强、输出脉宽调节范围大、体积小等特点。该脉冲产生器已成功应用于像增强器高速摄影的电子快门装置,并在其他需要高速、高压脉冲领域有一定应用前景。
通過研究功率MOSFET器件的開關特性和脈遲產生技術,設計瞭互補推輓和集成芯片兩種MOSFET柵驅動脈遲電路,其較好的驅動能力,極大的提升瞭MOSFET的開關速度,分彆實現瞭上升(下降)時間小于5 ns和2.5 ns、輸齣幅度300~500 V、脈遲寬度5 ns~0.2ms可調的高速、高壓的脈遲產生與放大。據此研製成功的脈遲產生器具有穩定性好、帶負載能力彊、輸齣脈寬調節範圍大、體積小等特點。該脈遲產生器已成功應用于像增彊器高速攝影的電子快門裝置,併在其他需要高速、高壓脈遲領域有一定應用前景。
통과연구공솔MOSFET기건적개관특성화맥충산생기술,설계료호보추만화집성심편량충MOSFET책구동맥충전로,기교호적구동능력,겁대적제승료MOSFET적개관속도,분별실현료상승(하강)시간소우5 ns화2.5 ns、수출폭도300~500 V、맥충관도5 ns~0.2ms가조적고속、고압적맥충산생여방대。거차연제성공적맥충산생기구유은정성호、대부재능력강、수출맥관조절범위대、체적소등특점。해맥충산생기이성공응용우상증강기고속섭영적전자쾌문장치,병재기타수요고속、고압맥충영역유일정응용전경。
Complementary push-pull circuit and MOSFET DRIVER module circuit are designed according to the analysis of switch characters and pulse-generating technology of MOSFETs.They improved the switch rate of MOSFETs for their good drive ability and high speed and high voltage pulses can be generated and amplified. Less than 5ns and 2.5ns of the rise time (fall time) can be achieved respectively.The amplitude of -300V~-500V and the pulse width of 5ns~1ms can be achieved by both of them.Designed pulse generators based on the driving circuits have high performances of reliability, stability, load capacity and range of pulse width.They have been used in gating image intensifiers for high-speed photography and can be applied in many regions which need pulses with high amplitude, high-speed edge and large width range.