传感技术学报
傳感技術學報
전감기술학보
Journal of Transduction Technology
2014年
12期
1615-1621
,共7页
揣荣岩%王健%代全%杨理践
揣榮巖%王健%代全%楊理踐
췌영암%왕건%대전%양리천
压力传感器%过载保护%牺牲层技术%多晶硅纳米膜
壓力傳感器%過載保護%犧牲層技術%多晶硅納米膜
압력전감기%과재보호%희생층기술%다정규납미막
pressure sensor%overload protection%sacrificial layer technology%polysilicon nanofilm
提出了一种基于牺牲层技术的高过载压力传感器芯片。这种传感器充分利用了多晶硅机械特性和多晶硅纳米膜的压阻特性优势,提高了传感器满量程输出和过载能力。利用有限元方法设计了仿真模型,通过对弹性膜片应力分布的静态分析和非线性接触分析,给出了提高这种压力传感器满量程输出和过载能力的设计方法。并试制了量程为2.5 MPa的传感器芯片样品。测试结果表明样品的过载压力超过7倍量程,5 V供电条件下,满量程输出达到362 mV。
提齣瞭一種基于犧牲層技術的高過載壓力傳感器芯片。這種傳感器充分利用瞭多晶硅機械特性和多晶硅納米膜的壓阻特性優勢,提高瞭傳感器滿量程輸齣和過載能力。利用有限元方法設計瞭倣真模型,通過對彈性膜片應力分佈的靜態分析和非線性接觸分析,給齣瞭提高這種壓力傳感器滿量程輸齣和過載能力的設計方法。併試製瞭量程為2.5 MPa的傳感器芯片樣品。測試結果錶明樣品的過載壓力超過7倍量程,5 V供電條件下,滿量程輸齣達到362 mV。
제출료일충기우희생층기술적고과재압력전감기심편。저충전감기충분이용료다정규궤계특성화다정규납미막적압조특성우세,제고료전감기만량정수출화과재능력。이용유한원방법설계료방진모형,통과대탄성막편응력분포적정태분석화비선성접촉분석,급출료제고저충압력전감기만량정수출화과재능력적설계방법。병시제료량정위2.5 MPa적전감기심편양품。측시결과표명양품적과재압력초과7배량정,5 V공전조건하,만량정수출체도362 mV。
A chip of high overload pressure sensor based on sacrificial layer technology is presented. The sensor takes advantages of polysilicon mechanical and polysilicon nanofilm piezoresistive characteristics to increase its full scale output and overload capacity. A simulation model of the proposed sensor is designed by finite element analysis. With the analyses of static and nonlinear contact for stress distribution on the sensor membrane,a design method is proposed to improve the pressure sensor full scale output and overload capacity. And a 2.5MPa full scale pressure sensor sample is developed. The sample measurement results show that an overpressure of 7 times higher than full scale pressure,a full scale output voltage of 362 mV under a supply voltage of 5 V are achieved.