长春理工大学学报（自然科学版）
長春理工大學學報（自然科學版）
장춘리공대학학보（자연과학판）
JOURNAL OF CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY(NATURAL SCIENCE EDITION)
2014年
6期
1-4
,共4页
何斌太%刘国军%魏志鹏%安宁%刘鹏程%刘超%王旭
何斌太%劉國軍%魏誌鵬%安寧%劉鵬程%劉超%王旭
하빈태%류국군%위지붕%안저%류붕정%류초%왕욱
GaAsSb/GaAs%量子阱%垂直腔面发射激光器%阈值电流%斜率效率
GaAsSb/GaAs%量子阱%垂直腔麵髮射激光器%閾值電流%斜率效率
GaAsSb/GaAs%양자정%수직강면발사격광기%역치전류%사솔효솔
GaAsSb/GaAs%quantum well%vertical cavity surface emitting laser%threshold current%slope efficiency
设计了用于提高1.3μm GaAsSb/GaAs单量子阱激光器光反馈的分布布拉格反射镜。基于PICS3D软件建立了单量子阱垂直腔面发射激光器仿真模型，并对有源区量子阱的材料组分和阱宽进行了优化分析。结果表明，量子阱组分为GaAs0.64Sb0.36/GaAs、阱宽为7nm时，器件的阈值电流为0.8mA，斜率效率为0.017W/A。当输入电流为8mA时，输出功率达到0.12mW。
設計瞭用于提高1.3μm GaAsSb/GaAs單量子阱激光器光反饋的分佈佈拉格反射鏡。基于PICS3D軟件建立瞭單量子阱垂直腔麵髮射激光器倣真模型，併對有源區量子阱的材料組分和阱寬進行瞭優化分析。結果錶明，量子阱組分為GaAs0.64Sb0.36/GaAs、阱寬為7nm時，器件的閾值電流為0.8mA，斜率效率為0.017W/A。噹輸入電流為8mA時，輸齣功率達到0.12mW。
설계료용우제고1.3μm GaAsSb/GaAs단양자정격광기광반궤적분포포랍격반사경。기우PICS3D연건건립료단양자정수직강면발사격광기방진모형，병대유원구양자정적재료조분화정관진행료우화분석。결과표명，양자정조분위GaAs0.64Sb0.36/GaAs、정관위7nm시，기건적역치전류위0.8mA，사솔효솔위0.017W/A。당수입전류위8mA시，수출공솔체도0.12mW。
The distributed bragg reflectors of 1.3μm GaAsSb/GaAs single quantum well vertical cavity surface emitting laser are designed and used for developing the optical feedback.The simulation model of single quantum well vertical cavity surface emitting laser which is based on PICS3D software is established and the material composition and the well width are optimally analyzed. The results show that when the material composition is GaAs0.64Sb0.36/GaAs and the well width is 7nm, the threshold current is 0.8mA and the slope efficiency is 0.017W/A. The output optical power is 0.12mW under the input current 8mA.
