CAJ | 학술논문

大量研究表明，大功率半导体激光器失效的一个主要表现就是半导体激光器的腔面退化，而空气中的灰尘与腔面氧化变质是其主要诱因。使用了新型的镀膜机真空室内180°自翻转机构制备半导体激光器腔面膜，大大降低半导体激光器腔面在大气条件下的暴露时间。从过程上直接降低自然氧化物和杂质产生的几率，减少腔面自然氧化物的诱导缺陷和杂质的非辐射复合中心。从大功率半导体激光器腔面膜一次性制备实验的结果表明，该技术制备的半导体激光器外推寿命对比常规实验提高了12.56%，同时还有效的提高了器件的最大输出功率。
대량연구표명，대공솔반도체격광기실효적일개주요표현취시반도체격광기적강면퇴화，이공기중적회진여강면양화변질시기주요유인。사용료신형적도막궤진공실내180°자번전궤구제비반도체격광기강면막，대대강저반도체격광기강면재대기조건하적폭로시간。종과정상직접강저자연양화물화잡질산생적궤솔，감소강면자연양화물적유도결함화잡질적비복사복합중심。종대공솔반도체격광기강면막일차성제비실험적결과표명，해기술제비적반도체격광기외추수명대비상규실험제고료12.56%，동시환유효적제고료기건적최대수출공솔。
Research showed that cavity surface degradation of LD was a mainly express in high power semiconductor la-ser failure. Additionally, the dust in the air and the cavity surface oxidation were main inducement of this failure. In this chapter,a new 180°automatic turnover mechanism was used on both sides of the LD cavity to reduce the exposure time of cavity surface at atmospheric conditions. The process reduced the induced defect natural oxide and non-radiative recombination centers on cavity because of decrease risk for natural oxides and impurities. Results showed that this pro-cess could improve 12.56% compared to the conventional experiment on LD extrapolated lifetime, and it also was an effective method on max power of LD.