现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2015年
2期
128-131
,共4页
带隙基准源%曲率补偿%电压抑制比%模/数转换器
帶隙基準源%麯率補償%電壓抑製比%模/數轉換器
대극기준원%곡솔보상%전압억제비%모/수전환기
bandgap reference%curvature compensation%PSRR%ADC
设计了一种应用于工作电压为1.8 V的流水型模数转换器(ADC)的带隙基准源。与传统电流模式带隙基准源不同,该带隙基准源采用曲率补偿技术,降低了温度系数,提高了精度。分析提高电源抑制比的方法,设计低压共源共栅电流镜偏置的折叠式共源共栅运放,提高了带隙基准源的电源抑制比。采用CSMC 0.18μm CMOS工艺,获得了900 mV的带隙基准, Spectre仿真结果表明,带隙基准源正常启动,在-40~125℃温度范围内温度系数低至3 ppm/℃,低频时的电源抑制比达89 dB。
設計瞭一種應用于工作電壓為1.8 V的流水型模數轉換器(ADC)的帶隙基準源。與傳統電流模式帶隙基準源不同,該帶隙基準源採用麯率補償技術,降低瞭溫度繫數,提高瞭精度。分析提高電源抑製比的方法,設計低壓共源共柵電流鏡偏置的摺疊式共源共柵運放,提高瞭帶隙基準源的電源抑製比。採用CSMC 0.18μm CMOS工藝,穫得瞭900 mV的帶隙基準, Spectre倣真結果錶明,帶隙基準源正常啟動,在-40~125℃溫度範圍內溫度繫數低至3 ppm/℃,低頻時的電源抑製比達89 dB。
설계료일충응용우공작전압위1.8 V적류수형모수전환기(ADC)적대극기준원。여전통전류모식대극기준원불동,해대극기준원채용곡솔보상기술,강저료온도계수,제고료정도。분석제고전원억제비적방법,설계저압공원공책전류경편치적절첩식공원공책운방,제고료대극기준원적전원억제비。채용CSMC 0.18μm CMOS공예,획득료900 mV적대극기준, Spectre방진결과표명,대극기준원정상계동,재-40~125℃온도범위내온도계수저지3 ppm/℃,저빈시적전원억제비체89 dB。
A high?accuracy bandgap reference source used for curvature compensation of 1.8 V pipeline ADC was designed. Different from traditional current?mode bandgap reference source,the curvature compensation technology was adopted in this bandgap reference source,which reduced low temperature coefficient and improved precision. The methods to improve PSRR are analyzed in this paper. A folded cascode amplifier with the bias of high?swing cascode current mirrors was designed,which im?proved PSRR of bandgap reference source. Based on the CSMC 0.18 μm CMOS process,the bandgap reference gains an output voltage of 900 mV. Simulation results indicate that the circuit can start up normally,the temperature coefficient is 3 ppm/℃ be?tween -40 ℃ and 125 ℃ and the PSRR is 89 dB at low frequency.