CAJ | 학술논문

于不同射频功率下制备出非晶 Si 膜并对其进行真空退火处理，采用 XRD、TEM和少子寿命测试仪等检测手段分析了退火前后薄膜的微观结构及电学性能。研究发现，随着射频功率的增加，薄膜的中程有序度和少子寿命均呈先增后减的趋势。经真空退火处理后，非晶硅膜得以晶化，少子寿命较退火前有大幅提高；另外，退火后薄膜的晶化率和少子寿命随射频功率的变化趋势与退火前一致，说明同一热力学条件下薄膜的中程有序度越高越容易发生晶化。
우불동사빈공솔하제비출비정 Si 막병대기진행진공퇴화처리，채용 XRD、TEM화소자수명측시의등검측수단분석료퇴화전후박막적미관결구급전학성능。연구발현，수착사빈공솔적증가，박막적중정유서도화소자수명균정선증후감적추세。경진공퇴화처리후，비정규막득이정화，소자수명교퇴화전유대폭제고；령외，퇴화후박막적정화솔화소자수명수사빈공솔적변화추세여퇴화전일치，설명동일열역학조건하박막적중정유서도월고월용역발생정화。
A series of amorphous silicon thin films with different order degree had been obtained by PECVD through adj usting RF power firstly and then annealed in vacuum.The microstructure and electrical property of the films had been investigated by XRD,Raman,HRTEM and the mi-nority carrier lifetime tester.With the in-crease of RF power,the order degree and the minority car-rier lifetime increase first and then decrease.After annealing,all of the films were crystalline and both of the crystallinity and grain size increase first and then de-crease with RF power.At the same time,the minority carrier lifetime had a significant improvement comparing with that before annealing.The results indicated that in the same condition of thermodynamics,the films with higher order de-gree are easier to crystallize.