南京师大学报（自然科学版）
南京師大學報（自然科學版）
남경사대학보（자연과학판）
JOURNAL OF NANJING NORMAL UNIVERSITY (NATURAL SCIENCE EDITION)
2014年
4期
51-58
,共8页
GaAs量子阱%入射光吸收系数%温度%掺杂浓度%电子态结构
GaAs量子阱%入射光吸收繫數%溫度%摻雜濃度%電子態結構
GaAs양자정%입사광흡수계수%온도%참잡농도%전자태결구
GaAs quantum well%intersubband optical absorption%temperature%doping concentration%the structure of electronic state
在有效质量近似下，通过自洽计算求解薛定谔方程和泊松方程，得到了温度不为零时Si δ掺杂的GaAs量子阱系统的电子态结构。研究了温度和掺杂浓度对系统子带能量、费米能级、电子密度分布和子带间光学吸收系数的影响。发现在一定的掺杂浓度下，费米能级会随着温度的升高而降低，子带间入射光总的吸收系数随温度升高而降低；在温度一定时，费米能级和子带能级随掺杂浓度的增大而增大，子带间入射光总吸收系数随掺杂浓度增大而增大。
在有效質量近似下，通過自洽計算求解薛定諤方程和泊鬆方程，得到瞭溫度不為零時Si δ摻雜的GaAs量子阱繫統的電子態結構。研究瞭溫度和摻雜濃度對繫統子帶能量、費米能級、電子密度分佈和子帶間光學吸收繫數的影響。髮現在一定的摻雜濃度下，費米能級會隨著溫度的升高而降低，子帶間入射光總的吸收繫數隨溫度升高而降低；在溫度一定時，費米能級和子帶能級隨摻雜濃度的增大而增大，子帶間入射光總吸收繫數隨摻雜濃度增大而增大。
재유효질량근사하，통과자흡계산구해설정악방정화박송방정，득도료온도불위령시Si δ참잡적GaAs양자정계통적전자태결구。연구료온도화참잡농도대계통자대능량、비미능급、전자밀도분포화자대간광학흡수계수적영향。발현재일정적참잡농도하，비미능급회수착온도적승고이강저，자대간입사광총적흡수계수수온도승고이강저；재온도일정시，비미능급화자대능급수참잡농도적증대이증대，자대간입사광총흡수계수수참잡농도증대이증대。
By solving Schr?dinger equation and Poisson equation self-consistently under the effective mass approximation, we calculated the structure of the electronic state of Siδ-doped GaAs quantum well system at T≠0. We studied the effect of temperature,doping concentration,and energy of incident light on the intersubband energy,Fermi energy,electron con-centration distribution and intersubband optical absorption coefficient. It is found that at the given doping concentration, the Fermi energy decrease with the increase of temperature,the total intersubband optical absorption coefficient decrease with the increase of temperature. And at the given temperature, the total intersubband optical absorption coefficient increase with the increase of doping concentration.
