红外与激光工程
紅外與激光工程
홍외여격광공정
INFRARED AND LASER ENGINEERING
2014年
z1期
164-168
,共5页
单粒子翻转%SRAM 型 FPGA%故障注入
單粒子翻轉%SRAM 型 FPGA%故障註入
단입자번전%SRAM 형 FPGA%고장주입
SEU%SRAM-based FPGA%fault injection
SRAM 型 FPGA在空间辐照环境下，容易受到单粒子效应的影响，导致 FPGA存储单元发生位翻转，翻转达到一定程度会导致功能错误。为了评估FPGA对单粒子效应的敏感程度和提高FPGA抗单粒子的可靠性，对实现故障注入的关键技术进行了研究，对现有技术进行分析，设计了单粒子翻转效应敏感位测试系统，利用SRAM 型 FPGA部分重配置特性，采用修改FPGA配置区数据位来模拟故障的方法，加速了系统的失效过程，实现对单粒子翻转敏感位的检测和统计，并通过实验进行验证，结果表明：设计合理可行，实现方式灵活，成本低，为SRAM型 FPGA抗单粒子容错设计提供了有利支持。
SRAM 型 FPGA在空間輻照環境下，容易受到單粒子效應的影響，導緻 FPGA存儲單元髮生位翻轉，翻轉達到一定程度會導緻功能錯誤。為瞭評估FPGA對單粒子效應的敏感程度和提高FPGA抗單粒子的可靠性，對實現故障註入的關鍵技術進行瞭研究，對現有技術進行分析，設計瞭單粒子翻轉效應敏感位測試繫統，利用SRAM 型 FPGA部分重配置特性，採用脩改FPGA配置區數據位來模擬故障的方法，加速瞭繫統的失效過程，實現對單粒子翻轉敏感位的檢測和統計，併通過實驗進行驗證，結果錶明：設計閤理可行，實現方式靈活，成本低，為SRAM型 FPGA抗單粒子容錯設計提供瞭有利支持。
SRAM 형 FPGA재공간복조배경하，용역수도단입자효응적영향，도치 FPGA존저단원발생위번전，번전체도일정정도회도치공능착오。위료평고FPGA대단입자효응적민감정도화제고FPGA항단입자적가고성，대실현고장주입적관건기술진행료연구，대현유기술진행분석，설계료단입자번전효응민감위측시계통，이용SRAM 형 FPGA부분중배치특성，채용수개FPGA배치구수거위래모의고장적방법，가속료계통적실효과정，실현대단입자번전민감위적검측화통계，병통과실험진행험증，결과표명：설계합리가행，실현방식령활，성본저，위SRAM형 FPGA항단입자용착설계제공료유리지지。
SRAM- based FPGA in the space radiation environment is effected by single event, which leads to the occurrence of FPGA memory cell bit flip. When the flip up to a certain extent, the function may become errors. To assess the sensitivity of FPGA single event and improve the reliability of FPGA single event, the key technology to realize fault injection was studied, the existing technology was analyzed, SEU sensitive bit test system was designed, based on partial reconfiguration feature of SRAM-based FPGA, and the modified FPGA configuration data bits was used to simulate a fault zone, the method accelerated the process of system failure, realized the single event upset sensitive position detection and statistics. Experiments show that the design is reasonable, implementation is flexibale, and cost is low, and provides favorable support for SRAM- based FPGA anti- tolerant design.
