CAJ | 학술논문

利用脉冲激光单粒子翻转敏感区定位成像系统，对静态随机存储器件ID T 71256开展了单粒子翻转敏感区定位的试验研究。为避开器件正面金属层对激光的阻挡，试验采用背面辐照方式进行测试。试验结果表明，存储单元中存储数据类型对器件单粒子翻转的敏感性有较大影响，由测得的单粒子翻转敏感区分布图经处理得到单粒子翻转截面，结果与重离子试验测得的翻转截面数据一致。
이용맥충격광단입자번전민감구정위성상계통，대정태수궤존저기건ID T 71256개전료단입자번전민감구정위적시험연구。위피개기건정면금속층대격광적조당，시험채용배면복조방식진행측시。시험결과표명，존저단원중존저수거류형대기건단입자번전적민감성유교대영향，유측득적단입자번전민감구분포도경처리득도단입자번전절면，결과여중리자시험측득적번전절면수거일치。
The pulsed laser facility for single event upset (SEU) sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256 .To avoid the block of the metal layer in the front side of integrated circuit ,the backside testing method was used .The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell .The SEU sensitivity mapping could be used to construct the corresponding SEU cross section ,w hich is validated by the heavy ion beam test result .