长春理工大学学报（自然科学版）
長春理工大學學報（自然科學版）
장춘리공대학학보（자연과학판）
JOURNAL OF CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY(NATURAL SCIENCE EDITION)
2015年
1期
6-9
,共4页
高功率%窄脉冲%抗干扰%半导体激光器%驱动电路
高功率%窄脈遲%抗榦擾%半導體激光器%驅動電路
고공솔%착맥충%항간우%반도체격광기%구동전로
high power%narrow pulse%anti-interference%semiconductor laser%drive circuit
为获得脉冲宽度窄、前沿上升速度快的大功率激光输出，以提高激光引信等武器装备抗干扰的性能，设计出了一种由高压电源、驱动电路及多管芯激光器组成的高功率窄脉冲半导体激光器模块。激光器采用多管芯串并联组合发光的方式，驱动电路部分实现高压储能放电，使用了高速开关断器件MOSFET作为LD放电回路的开关，应用板载技术进行封装。在较大光功率输出的同时，脉冲波形宽度更窄、前沿上升速度更快。最后经OrCAD/Pspice软件进行仿真分析。实验结果表明，模块实现了高功率窄脉冲的激光输出，得到脉冲宽度为8ns、上升时间为2ns的窄脉冲，最大输出功率可达200W。
為穫得脈遲寬度窄、前沿上升速度快的大功率激光輸齣，以提高激光引信等武器裝備抗榦擾的性能，設計齣瞭一種由高壓電源、驅動電路及多管芯激光器組成的高功率窄脈遲半導體激光器模塊。激光器採用多管芯串併聯組閤髮光的方式，驅動電路部分實現高壓儲能放電，使用瞭高速開關斷器件MOSFET作為LD放電迴路的開關，應用闆載技術進行封裝。在較大光功率輸齣的同時，脈遲波形寬度更窄、前沿上升速度更快。最後經OrCAD/Pspice軟件進行倣真分析。實驗結果錶明，模塊實現瞭高功率窄脈遲的激光輸齣，得到脈遲寬度為8ns、上升時間為2ns的窄脈遲，最大輸齣功率可達200W。
위획득맥충관도착、전연상승속도쾌적대공솔격광수출，이제고격광인신등무기장비항간우적성능，설계출료일충유고압전원、구동전로급다관심격광기조성적고공솔착맥충반도체격광기모괴。격광기채용다관심천병련조합발광적방식，구동전로부분실현고압저능방전，사용료고속개관단기건MOSFET작위LD방전회로적개관，응용판재기술진행봉장。재교대광공솔수출적동시，맥충파형관도경착、전연상승속도경쾌。최후경OrCAD/Pspice연건진행방진분석。실험결과표명，모괴실현료고공솔착맥충적격광수출，득도맥충관도위8ns、상승시간위2ns적착맥충，최대수출공솔가체200W。
In order to get a short rise time and narrow-pulse width with high-power output light to improve the ability of resistance to environmental interference in many military areas like laser fuze area, the narrow-pulse semiconductor laser module was designed,which was consists of high-voltage power,drive circuit and multi-die laser. A combination of the laser multi-chip array structure emitting way was used in the semiconductor laser. A high voltage storage was used in the driving circuit and the high speed switching component MOSFET as the switch of the LD discharge circuit and packaged with on-board technology. In contrast,a larger optical power output with a narrower pulse waveform and a faster front rising were got, the rise time of the pulse leading edge was effectively shortened and a more narrow pulse waveform was exported. Finally, the LD discharge circuit was simulated and a pulse width of 8ns and narrow pulse rise time less than 2ns by OrCAD / Pspice were got. The maximum output power was up to more than 200W. The experimental results show that this semiconductor laser module can output high power and narrow laser pulse.
