CAJ | 학술논문

采用化学气相沉积法，通过金属镓和氨气的直接反应，在石英衬底上沉积出GaN纳米线。利用 XRD和SEM对制备的 GaN 纳米线进行了结构和形貌的表征。结果表明合成的GaN纳米线为六方纤锌矿结构，直径为100~200 nm，长度达几微米，GaN纳米线的生长符合VLS生长模型。室温PL光谱表明GaN纳米线在395 nm和566 nm的发光峰主要与Ga空位或者N空位引起的缺陷能级相关。
채용화학기상침적법，통과금속가화안기적직접반응，재석영츤저상침적출GaN납미선。이용 XRD화SEM대제비적 GaN 납미선진행료결구화형모적표정。결과표명합성적GaN납미선위륙방섬자광결구，직경위100~200 nm，장도체궤미미，GaN납미선적생장부합VLS생장모형。실온PL광보표명GaN납미선재395 nm화566 nm적발광봉주요여Ga공위혹자N공위인기적결함능급상관。
GaN Nanowires were deposited on quartz substrate by direct reaction of the metal gallium and ammonia using the CVD method. The structure and the morphologies of GaN nanowires were characterized by XRD and SEM. The nanowires were hexagonal wurtzite structure with diameters ranging from 100 nm to 200 nm and lengths of about several microns. The growth of GaN nanowires is governed by a VLS growth mechanism. The room temperature photoluminescence (PL) measurements show that the emission at 395 nm and 566 nm mainly are related by defect levels, which are caused by the Ga vacancy and N vacancy.