CAJ | 학술논문

利用直流反应磁控溅射法在Si3 N4陶瓷基体上制备了 T iN导电薄膜。采用X射线衍射仪（XRD）、扫描电镜（SEM）和电子能谱（EDS）对薄膜的物相组成以及表面形貌进行分析，表明 TiN薄膜均匀，且与基体有较强的附着力。采用SZ82型四探针测试仪对薄膜进行了方阻随厚度变化的分析，表明薄膜的厚度对薄膜的电性能有很大的影响。
이용직류반응자공천사법재Si3 N4도자기체상제비료 T iN도전박막。채용X사선연사의（XRD）、소묘전경（SEM）화전자능보（EDS）대박막적물상조성이급표면형모진행분석，표명 TiN박막균균，차여기체유교강적부착력。채용SZ82형사탐침측시의대박막진행료방조수후도변화적분석，표명박막적후도대박막적전성능유흔대적영향。
TiN thin films are deposited on Si3 N4 substrates by reactive DC magnetron sputtering . The phase composition and surface morphology were studied by X -ray diffraction (XRD) ,scanning electron microscope (SEM) and Energy -dispersive X -ray spectroscopy (EDS) .The results reveal that TiN films are with uniform surface morphology ,and have strong adhesion with the substrates . T he square resistance of the films is measured by SZ 82 four-point probe measurement ,and it is ob‐served that the electrical characteristics of TiN films are correlated well with the film thickness .