电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
3期
16-19
,共4页
金勿毁%陈立桥%吕刚%李俊鹏%罗慧
金勿燬%陳立橋%呂剛%李俊鵬%囉慧
금물훼%진립교%려강%리준붕%라혜
低温共烧陶瓷%银通孔浆料%无机添加剂%烧结%渗透%玻璃粉
低溫共燒陶瓷%銀通孔漿料%無機添加劑%燒結%滲透%玻璃粉
저온공소도자%은통공장료%무궤첨가제%소결%삼투%파리분
LTCC%silver via fill paste%inorganic additive%sintering%permeation%glass frits
采用扫描电镜直接观察的方法,研究了氧化物或玻璃粉添加于通孔银浆中对浆料与Ferro A6生料带共烧行为的影响。结果表明,不加入无机添加剂时,生料带中的低熔点物相会向银通孔电极中渗透;质量分数10%的SiO2添加可阻碍渗透发生,并在电极与陶瓷孔界面处形成一个凸起的过渡层;用玻璃粉代替 SiO2添加时,则发生反向渗透现象;在浆料中添加质量分数1%~4%的玻璃粉,则可以有效阻止低熔点物相的流渗,浆料的方阻也满足组件对银通孔浆料电学性能的要求。
採用掃描電鏡直接觀察的方法,研究瞭氧化物或玻璃粉添加于通孔銀漿中對漿料與Ferro A6生料帶共燒行為的影響。結果錶明,不加入無機添加劑時,生料帶中的低鎔點物相會嚮銀通孔電極中滲透;質量分數10%的SiO2添加可阻礙滲透髮生,併在電極與陶瓷孔界麵處形成一箇凸起的過渡層;用玻璃粉代替 SiO2添加時,則髮生反嚮滲透現象;在漿料中添加質量分數1%~4%的玻璃粉,則可以有效阻止低鎔點物相的流滲,漿料的方阻也滿足組件對銀通孔漿料電學性能的要求。
채용소묘전경직접관찰적방법,연구료양화물혹파리분첨가우통공은장중대장료여Ferro A6생료대공소행위적영향。결과표명,불가입무궤첨가제시,생료대중적저용점물상회향은통공전겁중삼투;질량분수10%적SiO2첨가가조애삼투발생,병재전겁여도자공계면처형성일개철기적과도층;용파리분대체 SiO2첨가시,칙발생반향삼투현상;재장료중첨가질량분수1%~4%적파리분,칙가이유효조지저용점물상적류삼,장료적방조야만족조건대은통공장료전학성능적요구。
The influences of oxides and glass frits on the co-fired behavior between Ferro A6 tape and silver via fill paste were studied through scanning electron microscopy (SEM) observation. The results show that the low melting phase from Ferro A6 tape penetrates into silver via fill electrode in the absent of inorganic additive; the addition of 10% (mass fraction) SiO2 into Ag paste could prevent the permeation to hole and form a transition bulge loop at the interface; the reversal permeation occurres when 10% (mass fraction) glass frits were added instead of SiO2. 1%-4% (mass fraction) glass frits avoide the inter-permeation of low melting phase from either conductive electrode or green tape, and their sheet resistance values meet the requirement of electrical properties.