电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2015年
2期
44-48
,共5页
红外热像仪%芯片结温%热仿真%散热片
紅外熱像儀%芯片結溫%熱倣真%散熱片
홍외열상의%심편결온%열방진%산열편
infrascopeⅡ%junction temperature%thermal simulation%heat sink
通过红外热像仪测量GaAs功率放大器芯片的结温可知，温度最高点出现在芯片的栅条上，红外热像仪的放大倍数会导致芯片结温的差异性，正确选择测量的距离系数和放大倍数，可以提高红外热像仪的测温准确性。采用Flotherm软件仿真，并与试验值比较，两者的误差低于6%，由此验证了仿真的可靠性。运用Flotherm软件对T/R组件的散热片优化处理可知，散热片底板对温度影响较小，随着散热片数目的增加，温度逐渐降低，直到散热片的数目阻碍了空气流动，温度开始上升。
通過紅外熱像儀測量GaAs功率放大器芯片的結溫可知，溫度最高點齣現在芯片的柵條上，紅外熱像儀的放大倍數會導緻芯片結溫的差異性，正確選擇測量的距離繫數和放大倍數，可以提高紅外熱像儀的測溫準確性。採用Flotherm軟件倣真，併與試驗值比較，兩者的誤差低于6%，由此驗證瞭倣真的可靠性。運用Flotherm軟件對T/R組件的散熱片優化處理可知，散熱片底闆對溫度影響較小，隨著散熱片數目的增加，溫度逐漸降低，直到散熱片的數目阻礙瞭空氣流動，溫度開始上升。
통과홍외열상의측량GaAs공솔방대기심편적결온가지，온도최고점출현재심편적책조상，홍외열상의적방대배수회도치심편결온적차이성，정학선택측량적거리계수화방대배수，가이제고홍외열상의적측온준학성。채용Flotherm연건방진，병여시험치비교，량자적오차저우6%，유차험증료방진적가고성。운용Flotherm연건대T/R조건적산열편우화처리가지，산열편저판대온도영향교소，수착산열편수목적증가，온도축점강저，직도산열편적수목조애료공기류동，온도개시상승。
The junction temperature of GaAs power amplifier is measured by InfrascopeⅡ, and the highest temperature is found on the gate in power amplifier. The difference of junction temperature is affected by the amplify multiple of InfrascopeⅡ, and the veracity of junction temperature is improved by select distance coefficient and amplify multiple accurately. Comparison with the simulation value and experimentation value, and the error of them is less than 6%. The heat sink of T/R module is optimized by Flotherm, the temperature is affected less by base thickness, with the number of pins increased, the temperature gradually fall, until the number of pins block the air flow, the temperature go back.
