电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2015年
2期
40-43,48
,共5页
于轩%秦旺洋%贾路方%钱莹%丁东
于軒%秦旺洋%賈路方%錢瑩%丁東
우헌%진왕양%가로방%전형%정동
(Zr0.8Sn0.2)TiO4%复合添加ZnO/V2O5%烧结机制%介电性能
(Zr0.8Sn0.2)TiO4%複閤添加ZnO/V2O5%燒結機製%介電性能
(Zr0.8Sn0.2)TiO4%복합첨가ZnO/V2O5%소결궤제%개전성능
(Zr0.8Sn0.2)TiO4%ZnO and V2O5 co-doping%sintering mechanism%dielectric properties
讨论了复合添加ZnO/V2O5对(Zr0.8Sn0.2)TiO4介质陶瓷烧结机制和微波介电性能的影响。结果表明：ZnO/V2O5对(Zr0.8Sn0.2)TiO4的烧结有一定的促进作用，但ZnO/V2O5添加量的增大会造成晶格缺陷和残留气孔增多，从而导致材料的密度和Q×f降低。在1320℃保温4 h并添加了0.6 wt%ZnO/V2O5的试样具有相对较好的介电性能：εr=36.48，Q×f=16800 GHz。
討論瞭複閤添加ZnO/V2O5對(Zr0.8Sn0.2)TiO4介質陶瓷燒結機製和微波介電性能的影響。結果錶明：ZnO/V2O5對(Zr0.8Sn0.2)TiO4的燒結有一定的促進作用，但ZnO/V2O5添加量的增大會造成晶格缺陷和殘留氣孔增多，從而導緻材料的密度和Q×f降低。在1320℃保溫4 h併添加瞭0.6 wt%ZnO/V2O5的試樣具有相對較好的介電性能：εr=36.48，Q×f=16800 GHz。
토론료복합첨가ZnO/V2O5대(Zr0.8Sn0.2)TiO4개질도자소결궤제화미파개전성능적영향。결과표명：ZnO/V2O5대(Zr0.8Sn0.2)TiO4적소결유일정적촉진작용，단ZnO/V2O5첨가량적증대회조성정격결함화잔류기공증다，종이도치재료적밀도화Q×f강저。재1320℃보온4 h병첨가료0.6 wt%ZnO/V2O5적시양구유상대교호적개전성능：εr=36.48，Q×f=16800 GHz。
Sintering and dielectric properties of ZnO/V2O5-doped (Zr0.8Sn0.2)TiO4 ceramics was discussed. It is found that sintering process of (Zr0.8Sn0.2)TiO4 was promoted by using ZnO/V2O5 additives. But with increase of amount of ZnO/V2O5, more crystal defect and enclosed pore was appeared, which reduced bulk density and Q×f of the material. When added 0.6 wt%ZnO/V2O5 and sintered at 1 320℃for 4 h, (Zr0.8Sn0.2)TiO4 exhibited good dielectric properties:εr=36.48, Q×f=16 800 GHz.
